Cu2ZnSnS4 thin films prepared by sulfurizing different multilayer metal precursors

Science in China, Series E: Technological Sciences

Volumn 52, Issue 1, 2009, Pages 269-272

  Zhang, Jun ^a   Shao, Lexi ^a  

^a LINGNAN NORMAL UNIVERSITY   (China)

Author keywords

Cu2ZnSnS4; Ion beams sputtering; RF sputtering; Solar cell; Thin film

Indexed keywords

BEAM PLASMA INTERACTIONS; COPPER; ENERGY GAP; GALLIUM ALLOYS; ION BEAMS; ION BOMBARDMENT; IONS; MAGNETRON SPUTTERING; MAGNETRONS; MULTILAYER FILMS; MULTILAYERS; OPTICAL PROPERTIES; PHOTOVOLTAIC CELLS; SOLAR CELLS; SOLAR ENERGY; SOLAR EQUIPMENT; SOLIDS; SURFACE TREATMENT; THIN FILM DEVICES; THIN FILMS; TIN; ZINC;

ATOMIC PERCENTS; BAND GAPS; CU2ZNSNS4; ELECTRICAL AND OPTICAL PROPERTIES; GLASS SUBSTRATES; ION BEAM SPUTTERING; LARGE ABSORPTION COEFFICIENTS; LOW RESISTIVITIES; MULTILAYER METAL PRECURSORS; NEAR STOICHIOMETRIC; PROCESSING CONDITIONS; RF MAGNETRON SPUTTERING; RF SPUTTERING; TYPE STRUCTURES; VISIBLE RANGES;

FILM PREPARATION;

EID: 58349091043     PISSN: 10069321     EISSN: 1862281X     Source Type: Journal    
DOI: 10.1007/s11431-009-0013-8     Document Type: Article

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