Preparation of copper selenide thin films by simple chemical route at low temperature and their characterization

Journal of Alloys and Compounds

Volumn 469, Issue 1-2, 2009, Pages 478-482

  Hankare, P P ^a   Khomane, A S ^b   Chate, P A ^a   Rathod, K C ^a   Garadkar, K M ^c  

^a SHIVAJI UNIVERSITY   (India)

^b RAJARAM COLLEGE   (India)

^c UNIVERSITY OF PUNE   (India)

Author keywords

Chemical synthesis; Grain boundaries; Semiconductor; Thin films; X ray diffraction

Indexed keywords

ABSORPTION; COLOR FILMS; COPPER; CRYSTAL GROWTH; DIFFRACTION; ELECTRIC CONDUCTIVITY; ELECTRIC POWER MEASUREMENT; ELECTROMAGNETIC WAVE ABSORPTION; ENERGY ABSORPTION; FILM PREPARATION; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; LIGHT ABSORPTION; OPTICAL CONDUCTIVITY; OPTICAL MICROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR INSULATOR BOUNDARIES; SEMICONDUCTOR MATERIALS; SODIUM; SOLIDS; SYNTHESIS (CHEMICAL); THIN FILMS; X RAY ANALYSIS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

ALKALINE MEDIUMS; CHEMICAL ROUTES; CHEMICAL SYNTHESIS; COPPER SELENIDE; COPPER SULPHATE; ELECTRIC POWERS; ELECTRICAL CONDUCTIVITIES; ENERGY BAND GAPS; GLASS SUBSTRATES; LOW TEMPERATURES; OPTICAL ABSORPTIONS; P-TYPE CONDUCTIONS; PRECURSOR SOLUTIONS; SEMICONDUCTOR; SODIUM SELENOSULPHATE;

ELECTRIC NETWORK ANALYSIS;

EID: 58249141587     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2008.02.062     Document Type: Article

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