A 20 to 24 GHz + 16.8 dBm fully integrated power amplifier using 0.18 μm CMOS process

IEEE Microwave and Wireless Components Letters

Volumn 19, Issue 1, 2009, Pages 42-44

  Jen, Yung Nien ^a   Tsai, Jeng Han ^b   Peng, Chung Te ^a   Huang, Tian Wei ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b YUAN ZE UNIVERSITY   (Taiwan)

Author keywords

24 GHz; CMOS; Fully integrated; Power amplifier (PA)

Indexed keywords

24 GHZ; CASCODE; CHIP AREAS; CMOS; CMOS PROCESSES; FULLY INTEGRATED; HIGH POWER DENSITIES; INPUT AND OUTPUTS; ON CHIPS; OUTPUT SATURATIONS; POWER ADDED EFFICIENCIES; POWER DENSITIES; SMALL SIGNAL GAINS;

POWER AMPLIFIERS;

EID: 58149498298     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2008.2008591     Document Type: Article

References (7)

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