Pulse Current Electrochemical Deposition of Silicon for Porous Silicon Capping to Improve Hardness and Stability

Electrochemical and Solid-State Letters

Volumn 12, Issue 3, 2009, Pages

  Ali, N K ^a   Hashim, M R ^a   Abdul Aziz, A ^a  

^a SCHOOL OF PHYSICS   (Malaysia)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTROCHEMICAL ETCHING; EMISSION SPECTROSCOPY; HARDNESS; NONMETALS; REDUCTION;

AGING EFFECTS; CAPPING LAYERS; DEPOSITION TIMES; ELECTROCHEMICAL DEPOSITION OF SILICONS; ELECTROCHEMICAL DEPOSITIONS; POROUS SILICON STRUCTURES; POROUS STRUCTURES; PULSE ELECTROCHEMICAL ETCHINGS; PULSED CURRENTS;

POROUS SILICON;

EID: 58149479703     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3049861     Document Type: Article

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