Extraction of device parameters from dark current-voltage characteristics of PV devices

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 2, 2008, Pages 616-619

  Macabebe, Erees Q B ^a   Ernest Van Dyk, E ^a  

^a NELSON MANDELA METROPOLITAN UNIVERSITY   (South Africa)

Author keywords

[No Author keywords available]

Indexed keywords

DARK CURRENT-VOLTAGE; DEVICE PARAMETERS; DEVICE PERFORMANCE; EQUIVALENT CIRCUIT MODEL; GRAPHICAL REPRESENTATIONS; HIGH SERIES RESISTANCES; IDEALITY FACTORS; MONOCRYSTALLINE; MULTI-CRYSTALLINE SILICON SOLAR CELLS; PARASITIC RESISTANCES; PERFORMANCE LOSS; PN JUNCTION DIODES; SATURATION CURRENT; SERIES RESISTANCES; SHUNT RESISTANCES; SIMULATED DATA;

CURVE FITTING; POLYSILICON; SEMICONDUCTOR JUNCTIONS; SILICON SOLAR CELLS; SOLAR CELLS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 58149333144     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200776834     Document Type: Conference Paper

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