The effect of the built-in stress level of AlN layers on the properties of piezoelectric vibration energy harvesters

Journal of Micromechanics and Microengineering

Volumn 18, Issue 10, 2008, Pages

  Karakaya, K ^a   Renaud, M ^a,b   Goedbloed, M ^a   Van Schaijk, R ^a  

^a HOLST CENTRE   (Netherlands)

^b IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

BANDPASS FILTERS; BENDING (DEFORMATION); CAPACITANCE; ELECTRIC IMPEDANCE; ELECTROMECHANICAL DEVICES; HARVESTERS; METAL INSULATOR BOUNDARIES; NANOCANTILEVERS; PERMITTIVITY; PIEZOELECTRICITY; Q FACTOR MEASUREMENT; RESIDUAL STRESSES; SEMICONDUCTING ALUMINUM COMPOUNDS; STRENGTH OF MATERIALS;

ALN LAYERS; BIAS CONDITIONS; CRITICAL PARAMETERS; DEPOSITION PROCESSES; DIELECTRIC AND PIEZOELECTRIC PROPERTIES; DIELECTRIC PERMITTIVITIES; ELECTRICAL IMPEDANCES; ENERGY HARVESTING; LAYER THICKNESSES; METAL CAPACITORS; MICROMACHINED; OUTPUT POWERS; PIEZOELECTRIC COEFFICIENTS; PIEZOELECTRIC CONSTANTS; PIEZOELECTRIC VIBRATIONS; POINT BENDING; QUALITY FACTORS; STRESS LEVELS; TEST STRUCTURES; VOLTAGE RESPONSES;

TENSILE STRENGTH;

EID: 58149326748     PISSN: 09601317     EISSN: 13616439     Source Type: Journal    
DOI: 10.1088/0960-1317/18/10/104012     Document Type: Article

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