Scalable lumped modeling of single-ended and differential inductors for RF IC design

International Journal of RF and Microwave Computer-Aided Engineering

Volumn 19, Issue 1, 2009, Pages 110-119

  Ragonese, Egidio ^a   Scuderi, Angelo ^b   Biondi, Tonio ^b   Palmisano, Giuseppe ^a  

^a UNIVERSITY OF CATANIA   (Italy)

^b STMICROELECTRONICS   (Italy)

Author keywords

Compact modeling; Down converter; RF design; Silicon based technology; Spiral inductors and transformers; Voltage controlled oscillator

Indexed keywords

CIRCUIT SIMULATION; ELECTRIC CONVERTERS; ELECTRIC INDUCTORS; NETWORKS (CIRCUITS); OSCILLATORS (ELECTRONIC);

COMPACT MODELING; DOWN-CONVERTER; RF DESIGN; SPIRAL INDUCTORS AND TRANSFORMERS; VOLTAGE-CONTROLLED OSCILLATOR;

DESIGN;

EID: 58149260264     PISSN: 10964290     EISSN: 1099047X     Source Type: Journal    
DOI: 10.1002/mmce.20321     Document Type: Article

References (27)

1. Y.K. Koutsoyannopoulos and Y. Papananos, Systematic analysis and modeling of integrated inductors and transformer in RF IC design, IEEE Trans Circuits Syst II 47 (2000), 699-712.
2. J.N. Burghartz and B. Rejaei, On the design of RF spiral inductors on silicon, IEEE Trans Electron Devices 50 (2003), 718-729.
3. F. Rotella, B.K. Bhattacharya, V. Blaschke, M. Matloubian, A. Brotman, Y. Cheng, R. Divecha, D. Howard, K. Lampaert, P. Miliozzi, M. Racanelli, P. Singh, and P.J. Zampardi, A broad-band lumped element analytic model incorporating skin effect and substrate loss for inductors and inductor like components for silicon technology performance assessment and RFIC design, IEEE Trans Electron Devices 52 (2005), 1429-1441.
4. M. Danesh and J.R. Long, Differentially driven symmetric microstrip inductors, IEEE Trans Microwave Theory Tech 50 (2002), 332-341.
5. C.-H. Wu, C.-Y. Kuo, and S.-I. Liu, Selective metal parallel shunting inductor and its VCO application, IEEE Trans Microwave Theory Tech 52 (2005), 1811-1818.
6. C.P. Yue and S.S. Wong, Physical modeling of spiral inductors on silicon, IEEE Trans Electron Devices 47 (2000), 560-568.
7. L.J. Bahl, High-performance inductors, IEEE Trans Microwave Theory Tech 49 (2001), 654-664.
8. J. Sieiro, J.M. López-Villegas, J. Cabanillas, J.A. Osorio, and J. Samitier, A physical frequency-dependent compact model for RF integrated inductors, IEEE Trans Microwave Theory Tech 50 (2002), 384-392.
9. A.C. Watson, D. Melendy, P. Francis, K. Hwang, and A. Weisshaar, Comprehensive compact-modeling methodology for spiral inductors in silicon-based RFICs, IEEE Trans Microwave Theory Tech 52 (2004), 849-857.
10. H.Y.D. Yang, Design considerations of differential inductors in CMOS technology for RFIC, IEEE Radio Frequency Integrated Circuits Symposium. Digest, Fort Worth, USA, June 2004, pp. 449-452.
11. A. Watson, Y. Mayevskiy, P. Francis, K. Hwang, G. Srinivasan, and A. Weisshaar, Compact modeling of differential spiral inductors in Si-based RFICs, IEEE MTT-S Integrated Microwave Symposium. Digest, Fort Worth, Texas, USA, June 2004, pp. 1053-1056.
12. J. Chen and J.J. Liou, Modeling of on-chip differential inductors and transformers/baluns, experimental spiral inductors, IEEE Trans Electron Devices 54 (2007), 36.
13. A. Scuderi, T. Biondi, E. Ragonese, and G. Palmisano, A lumped scalable model for silicon integrated spiral inductors, IEEE Trans Circuits Syst I 51 (2004), 1203-1209.
14. F. Carrara, A. Scuderi, G. Tontodonato, and G. Palmisano, A very high efficiency silicon bipolar transistor, IEEE Electron Devices Meeting Technical Digest, Washington, DC, USA, December 2001, pp. 883-886.
15. T. Biondi, F. Carrara, A. Scuderi, and G. Palmisano, A silicon bipolar technology for high-efficiency power applications up to C-band, IEEE Radio Frequency Integrated Circuits Symposium, Philadelphia, USA, June 2003, pp. 155-158.
16. T. Biondi, A. Scuderi, E. Ragonese, and G. Palmisano, Characterization and modeling of silicon integrated spiral inductors for high-frequency applications, Springer Analog Integrated Circuits and Signal Processing 51 (2007), 89-100.
17. M.C.A.M. Koolen, J.A.M. Geelen, and M.P.J.G. Versleijen, An improved de-embedding technique for onwafer high-frequency characterization, in the Proceedings of IEEE Bipolar Circuits and Technology Meeting, Minneapolis, USA, September 1991, pp. 188-191.
18. J. Weng, A universal de-embedding procedure for the "on-wafer" GHz probing, IEEE Trans Electron Devices 32 (1995), 1703-1705.
19. T.E. Kolding, A four-step method, for de-embedding gigahertz on-wafer CMOS measurements, IEEE Trans Electron Devices 47 (2000), 734-740.
20. T. Biondi, A. Scuderi, E. Ragonese, and G. Palmisano, Sub-nH inductor modeling for RF IC design, IEEE Microwave Wireless Compon Lett 15 (2005), 922-924.
21. M. Pfost, H-M. Rein, and T. Holztwarth, Modeling substrate effects in the design of high-speed Si-bipolar ICs, IEEE J Solid State Circuits 31 (1996), 1493-1501.
22. E. Ragonese, A. Italia, and G. Palmisano, An image-reject down-converter for 802.11a and HIPERLAN2 wireless LANs, Springer Telecommun Syst 32 (2006), 105-115.
23. A. Scuderi and G. Palmisano, A low phase-noise voltage-controlled oscillator for 17-GHz applications, IEEE Microwave Wireless Compon Lett 16 (2006), 191-193.
24. D. Axelrad, E. de Foucauld, M. Boasis, P. Martin, P. Vincent, M. Belleville, and F. Gaffiot, A multi-phase 10 GHz VCO in CMOS/SOI for 40 GBits/s SONET OC-768 clock and data recovery circuits, Proceedings of IEEE Radio Frequency Integrated Circuits Symposium, Long Beach, USA, June 2005, pp. 573-576.
25. N. Seller, A. Cathelin, H. Lapuyade, J.-B. Bégueret, E. Chataigner, and D. Belot, A 10 GHz distributed voltage controlled oscillator for WLAN application in a VLSI 65 nm CMOS process, Proceedings of IEEE Radio Frequency Integrated Circuits Symposium, Honolulu, USA, June 2007, pp. 115-118.
26. A. Coustou, D. Dubuc, J. Graffeuil, O. Llopis, E. Tournier, and R. Plana, Low Phase Noise IP VCO for multistandard communication using a 0.35-μm BiC-MOS SiGe technology, IEEE Microwave Wireless Comp Lett 15 (2005), 71-73.
27. B. Park, S. Lee, S. Choi, and S. Hong, A 12-GHz fully integrated cascode CMOS LC VCO with Q-enhancement circuit, IEEE Microwave Wireless Comp Lett 18 (2008), 133-136.