Measurements of optical cross sections of the carbon vacancy in 4H-SiC by time-dependent photoelectron paramagnetic resonance

Journal of Applied Physics

Volumn 104, Issue 11, 2008, Pages

  Dashdorj, J ^a   Zvanut, M E ^a   Harrison, J G ^a  

^a UNIVERSITY OF ALABAMA AT BIRMINGHAM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRANSFER; ELECTRONIC DENSITY OF STATES; ION EXCHANGE; MASS TRANSFER; OPTICAL RESONATORS; PARAMAGNETIC MATERIALS; PARAMAGNETIC RESONANCE; PARAMAGNETISM; PHONONS; PHOTONS; RESONANCE; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; VACANCIES;

BAND EDGES; CARBON VACANCIES; ELECTRONIC DENSITIES; EMISSION OF ELECTRONS; FIRST ORDER KINETIC; HIGH PURITIES; OPTICAL CROSS SECTIONS; OPTICAL ENERGIES; PHOTOINDUCED CHANGES; PHOTOINDUCED ELECTRONS; PHOTON ENERGIES; POSITIVELY CHARGED; SINGLE DEFECTS; TIME DEPENDENCES; UPPER LIMITS;

INTEGRATED OPTOELECTRONICS;

EID: 58149250086     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3032907     Document Type: Article

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