Enhanced electrical conductance of ZnO nanowire FET by nondestructive surface cleaning

IEEE Transactions on Nanotechnology

Volumn 7, Issue 6, 2008, Pages 782-786

  Verma, Ved P ^a   Jeon, Hoonha ^b   Hwang, Sookhyun ^b   Jeon, Minhyon ^b   Choi, Wonbong ^a  

^a FLORIDA INTERNATIONAL UNIVERSITY   (United States)

^b Inje University   (South Korea)

Author keywords

Nanotechnology; Surface treatment; Ultraviolet (UV) radiation effect

Indexed keywords

DESORPTION; ELECTRIC WIRE; FIELD EFFECT TRANSISTORS; MESFET DEVICES; NANOTECHNOLOGY; NANOWIRES; OXYGEN; RADIATION; SURFACE TREATMENT; TRACE ANALYSIS; ZINC; ZINC OXIDE;

ACTIVE CHANNELS; CHARGE TRANSPORTS; DEPLETION LAYERS; DEVICE PERFORMANCES; ELECTRICAL CHARACTERISTICS; ELECTRICAL CONDUCTANCES; ENVIRONMENTAL CONDITIONS; HIGH TEMPERATURES; NONDESTRUCTIVE; OXYGEN DESORPTIONS; SURFACE STATES; ULTRAVIOLET (UV) RADIATION EFFECT; ULTRAVIOLET IRRADIATIONS; UV LIGHTS; ZINC OXIDE NANOWIRES; ZNO NANOWIRES;

SURFACE CLEANING;

EID: 58149234145     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2008.2005186     Document Type: Article

References (33)

1. V. Srikant and D. R. Clarkea, "On the optical band gap of zinc oxide," J. Appl. Phys., vol. 83, no. 10, pp. 5447-5451, May 1998.
2. Z. L. Wang, "Zinc oxide nanostructures: Growth, properties and applications," J. Phys. Condens. Matter, vol. 16, no. 25, pp. R829-R858, Jun. 2004.
3. P. X. Gao, Y. Ding, and Z. L. Wang, "Crystallographic orientation-aligned ZnO nanorods grown by a tin catalyst," Nano Lett., vol. 3, no. 9, pp. 1315-1320, Aug. 2003.
4. M. H. Huang, S. Mao, H. Feick, H. Q. Yan, Y. Y. Wu, H. Kind, E. Weber, R. Russo, and P. D. Yang, "Room-temperature ultraviolet nanowire nanolasers," Science, vol. 292, no. 5523, pp. 1897-1899, Jun. 2001.
5. H. T. Ng, J. Han, T. Yamada, P. Nguyen, Y. P. Chen, and M. Meyyappan, "Single Crystal Nanowire Vertical Surround-Gate Field-Effect Transistor," Nano Lett., vol. 4, no. 7, pp. 1247-1252, May 2004.
6. M.S. Arnold, P. Avouris, Z. W. Pan, and Z. L. Wang, "Field-Effect Transistors Based on Single Semiconducting Oxide Nanobelts," J. Phys. Chem. B, vol. 107, no. 3, pp. 659-663, Jan. 2003.
7. Z. Fan and J. G. Lu, "Chemical Sensing with ZnO Nanowire Field-Effect Transistor," IEEE Trans. Nano., vol. 5, no. 4, pp. 393-396, Jul. 2006.
8. T. M. Børseth, B. G. Svensson, and A. Y. Kuznetsov, "Identification of Oxygen and Zinc Vacancy Optical Signals in ZnO," Appl. Phys. Lett., vol. 89, no. 26, pp. 262112-1-262112-3, Dec. 2006.
9. W. R. Murphy, T. H. Veerkamp, and T. W. Leland, "Effect of ultraviolet radiation on zinc oxide catalysts," J. Catal., vol. 43, no. 1-3, pp. 304-321, Jun. 1976.
10. S. R. Morrison, Surface Physics of Phosporus and Semiconductors. New York: Academic, 1975, p. 221.
11. S. A. Dayeh, D. P. R. Aplin, X. Zhou, P. K. L. Yu, E. T. Yu, and D. Wang, "High electron mobility InAs nanowire field-effect transistors," Small, vol. 3, no. 2, pp. 326-332, Feb. 2007.
12. S. A. Dayeh, C. Soci, P. K. L. Yu, E. T. Yu, and D. Wang, "Influence of surface states on the extraction of transport parameters from InAs nanowire field effect transistors," Appl. Phys. Lett., vol. 90, no. 16, pp. 162112-1-162112-3, Apr. 2007.
13. S. Ju, S. Kim, S. Mohammadi, and D. B. Janes, "Interface studies of ZnO nanowire transistors using low-frequency noise and temperaturedependent I-V measurements," Appl. Phys. Lett., vol. 92, no. 2, pp. 022104-1-022104-3, Jan. 2008.
14. J. Goldberger, D. J. Sirbuly, M. Law, and P. Yang, "ZnO nanowire transistors," J. Phys. Chem. Lett. B, vol. 109, no. 1, pp. 9-14, Dec. 2004.
15. M.-C. Jeong, B.-Y. Oh, M.-H. Ham, and J.-M. Myoung, " Electroluminescence from ZnO nanowires in n-ZnO film/ZnO nanowire array/p-GaN film heterojunction light-emitting diodes," Appl. Phys. Lett., vol. 88, no. 20, pp. 202105-1-202105-3, May 2006.
16. W. Park, J. S. Kim, G. C. Yi, M. H. Bae, and H.-J. Lee, "Fabrication and electrical characteristics of high-performance ZnO nanorod field-effect transistors," Appl. Phys. Lett., vol. 85, no. 21, pp. 5052-5054, Nov. 2004.
17. K. Keem, D. Y. Jeong, S. Kim, M. S. Lee, I. S. Yeo, U. I. Chung, and J. T. Moon, "Fabrication and device characterization of omega-shapedgate ZnO nanowire field-effect transistors," Nano Lett., vol. 6, no. 7, pp. 1454-1458, Jun. 2007.
18. Y. Dai, Y. Zhang, Y. Q. Bai, and Z. L. Wang, "Bicrystalline zinc oxide nanowires," Chem. Phys. Lett., vol. 375, no. 1/2, pp. 96-101, Jun. 2003.
19. Q. H. Li, T. Gao, Y. G. Wang, and T. H. Wang, "Adsorption and desorption of oxygen probed from ZnO nanowire films by photocurrent measurements," Appl Phys. Lett., vol. 86, no. 12, pp. 123117-1-123117-3, Mar. 2005.
20. C. Soci, A. Zhang, B. Xiang, S.A. Dayeh, D. P. R. Aplin, J. Park, X. Y. Bao, Y. H. Lo, and D. Wang, "ZnO nanowire UV photodetectors with high internal gain," Nano Lett., vol. 7, no. 4, pp. 1003-1009, Mar. 2007.
21. J. Lagowski, E. S. Sproles, Jr., and H. C. Gatos, "Quantitative study of the charge transfer in chemisorption; oxygen chemisorption on ZnO," J. Appl. Phys., vol. 48, no. 8, pp. 3566-3575, Aug. 1977.
22. 2," Solid State Chem., vol. 88, no. 2, pp. 443-450, Oct. 1990.
23. Z. Fan, D. Wang, P. C. Chang, W. Y. Tseng, and J. G. Lu, "ZnO nanowire field-effect transistor and oxygen sensing property," Appl. Phys. Lett., vol. 85, no. 24, pp. 5923-5925, Dec. 2004.
24. 2 films in a ZnO nanowire transistor," Nanotechnology, vol. 17, no. 9, pp. 2116-2121, May 2006.
25. T. I. Barry and F. S. Stone, "The reactions of oxygen at dark and irradiated zinc oxide surface," Proc. R. Soc. Lond. Ser. A, Mathe. Phys. Sci., vol. 255, no. 1280, pp. 124-144, Mar. 1960.
26. N. Asakuma, H. Hirashima, H. Imaia, T. Fukui, A. Maruta, M. Toki, and K. Awazu, "Photocrystallization of amorphous ZnO," J. Appl. Phys., vol. 92, no. 10, pp. 5707-5710, Nov. 2002.
27. Q. H. Li, T. Gao, Y. G. Wang, and T. H. Wang, "Adsorption and desorption of oxygen probed from ZnO nanowire films by photocurrent measurements," Appl Phys. Lett., vol. 86, no. 12, pp. 123117-1-123117-3, Mar. 2005.
28. S. Ramo, J. R. Whinnery, and T. V. Duzer, Fields and Waves in Communication Electronics. New York: Wiley, 1994.
29. S. M. Sze, Physics of Semiconductor Devices. New York: Wiley, 1981.
30. V. P. Verma, D. H. Kim, M. Jeon, and W. B. Choi, "Fabrication and characteristics of low doped gallium-zinc oxide thin film transistor," Mater. Res. Soc. Symp. Proc., vol. 963, pp. 0963-Q12-01, 2007.
31. Y. Kwon, Y. Li, Y. W. Heo, M. Jones, P. H. Holloway, D. P. Norton, Z. V. Park, and S. Li, "Enhancement-mode thin-film field-effect transistor using phosphorus-doped (Zn, Mg)O channel," Appl. Phys. Lett., vol. 84, no. 14, pp. 2685-2687, Apr. 2004.
32. Q. H. Li, Q. Wan, Y. X. Liang, and T. H. Wang, "Electronic transport through individual ZnO nanowires," Appl. Phys. Lett., vol. 84, no. 22, pp. 4556-4558, May 2004.
33. Y. W. HeO, L. C. Tien, Y. Kwon, D. P. Norton, S. J. Pearton, B. S. Kang, and F. Ren, "Depletion-mode ZnO nanowire field-effect transistor," Appl. Phys. Lett., vol. 85, no. 12, pp. 2274-2276, Sep. 2004.