Influence of doping profiles on coherent acoustic phonon detection and generation in semiconductors

Journal of Applied Physics

Volumn 104, Issue 12, 2008, Pages

  Hudert, F ^a   Bartels, A ^a   Dekorsy, T ^a   Kohler K ^b  

^a UNIVERSITY OF KONSTANZ   (Germany)

^b FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTIC PROPERTIES; ACOUSTIC WAVES; ACOUSTICS; CRYSTAL GROWTH; MOLECULAR BEAMS; MOLECULAR DYNAMICS; SEMICONDUCTOR LASERS; SIGNAL TO NOISE RATIO; ULTRASONIC APPLICATIONS; ULTRASONICS;

ACQUISITION TIMES; ASYNCHRONOUS OPTICAL SAMPLINGS; COHERENT ACOUSTIC PHONONS; COHERENT STRAINS; CONTACTLESS; DETECTION MECHANISMS; DOPING DENSITIES; DOPING PROFILES; FEMTOSECOND LASERS; HOMOEPITAXIAL; N-DOPED; NONINVASIVE WAYS; OPTICAL REFLECTIVITIES; PICOSECOND ULTRASOUNDS; ROOM TEMPERATURES; SEMI-CONDUCTORS; SENSITIVITY FUNCTIONS; SIGNAL-TO-NOISE RATIOS; STRUCTURES GROWN; TIME DOMAINS; TIME RESOLUTIONS; TIME- DELAYS; UNDOPED REGIONS;

DOPING (ADDITIVES);

EID: 58149232312     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3033140     Document Type: Article

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