The temperature dependence of ion-beam-induced amorphization in β-SiC

Nuclear Inst. and Methods in Physics Research, B

Volumn 106, Issue 1-4, 1995, Pages 298-302

  Weber, W J ^a   Wang, L M ^b  

^a PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

^b UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 58149210848     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(95)00722-9     Document Type: Article

References (14)

1. Radiation-induced amorphization and swelling in ceramics
2. High-resolution electron microscopy study of electron-irradiation-induced crystalline-to-amorphous transition in α-SiC single crystals
3. Electron-irradiation-induced crystalline-to-amorphous transition in β-SiC single crystals
4. Ion implantation in β-SiC: Effect of channeling direction and critical energy for amorphization
5. In situ ion irradiation /implantation studies in the HVEM-tandem facility at argonne national laboratory
6. A model for the formation of amorphous Si by ion bombardment
7. The kinetics of self ion amorphization of silicon