SCOPUS 정보 검색 플랫폼

Materials Chemistry and Physics

Volumn 113, Issue 2-3, 2009, Pages 658-663

Low temperature sintering and dielectric properties of BaTiO3 with glass addition

(4) Hsiang, Hsing I a Hsi, Chi Shiung b Huang, Chun Chi c Fu, Shen Li c

a NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

b NATIONAL UNITED UNIVERSITY (Taiwan)

c I SHOU UNIVERSITY (Taiwan)

Author keywords

BaTiO3; Glass; LTCC; Sintering

Indexed keywords

CERAMIC CAPACITORS; CHEMICAL REACTIONS; DIELECTRIC LOSSES; DIELECTRIC PROPERTIES; GLASS; GLASS CERAMICS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ZINC COMPOUNDS; SILICON COMPOUNDS; ZINC OXIDE;

BATIO3; GLASS ADDITIONS; HIGH DIELECTRIC CONSTANTS; LOW-TEMPERATURE SINTERING; LTCC; RELATIVE DENSITIES; SINTERING AIDS; SINTERING BEHAVIORS; SINTERING TEMPERATURES;

SINTERING;

EID: 58149163428 PISSN: 02540584 EISSN: None Source Type: Journal
DOI: 10.1016/j.matchemphys.2008.08.033 Document Type: Article

Times cited : (44)

References (14)

1
- 30344475181
- Baker A., Lanagan M., Randall C., Semouchkina E., Semouchkin G., Rajah K.Z., Eitel R., Rajab K.Z., Mittra R., and Rhee S. Int. J. Appl. Ceram. Technol. 2 (2005) 514
- (2005) Int. J. Appl. Ceram. Technol. , vol.2 , pp. 514
- Baker, A.¹ Lanagan, M.² Randall, C.³ Semouchkina, E.⁴ Semouchkin, G.⁵ Rajah, K.Z.⁶ Eitel, R.⁷ Rajab, K.Z.⁸ Mittra, R.⁹ Rhee, S.¹⁰

2
- 10944228144
- Lin Y.S., Liu C.C., Li K.M., and Chen C.H. IEEE Trans. Micro Theory Technol. 52 (2004) 2718
- (2004) IEEE Trans. Micro Theory Technol. , vol.52 , pp. 2718
- Lin, Y.S.¹ Liu, C.C.² Li, K.M.³ Chen, C.H.⁴

3
- 0028514372
- Takada T., Wang S.F., Yoshikawa S., Jang S.J., and Newnham R.E. J. Am. Ceram. Soc. 77 (1994) 2485
- (1994) J. Am. Ceram. Soc. , vol.77 , pp. 2485
- Takada, T.¹ Wang, S.F.² Yoshikawa, S.³ Jang, S.J.⁴ Newnham, R.E.⁵

4
- 0028478936
- Takada T., Wang S.F., Yoshikawa S., Jang S.J., and Newnham R.E. J. Am. Ceram. Soc. 77 (1994) 1909
- (1994) J. Am. Ceram. Soc. , vol.77 , pp. 1909
- Takada, T.¹ Wang, S.F.² Yoshikawa, S.³ Jang, S.J.⁴ Newnham, R.E.⁵

5
- 0035096990
- Wang S.F., Yang T.C.K., Wang Y.R., and Kuromitsu Y. Ceram. Int. 27 (2001) 157
- (2001) Ceram. Int. , vol.27 , pp. 157
- Wang, S.F.¹ Yang, T.C.K.² Wang, Y.R.³ Kuromitsu, Y.⁴

6
- 27144491329
- Jeon H.P., Lee S.K., Kim S.W., and Choi D.K. Mater. Chem. Phys. 94 (2005) 185
- (2005) Mater. Chem. Phys. , vol.94 , pp. 185
- Jeon, H.P.¹ Lee, S.K.² Kim, S.W.³ Choi, D.K.⁴

7
- 0020129826
- Burn I. J. Mater. Sci. 17 (1982) 1398
- (1982) J. Mater. Sci. , vol.17 , pp. 1398
- Burn, I.¹

8
- 0035388518
- Chen L.S., Fu S.L., Lin W.K., and Huang K.D. Jpn. J. Appl. Phys. 40 (2001) 4581
- (2001) Jpn. J. Appl. Phys. , vol.40 , pp. 4581
- Chen, L.S.¹ Fu, S.L.² Lin, W.K.³ Huang, K.D.⁴

9
- 58149147130
- G.H. Maher, U.S. Patent 3619220 (1971).
- G.H. Maher, U.S. Patent 3619220 (1971).

10
- 58149149590
- G.H. Maher, U.S. Patent 3885941 (1975).
- G.H. Maher, U.S. Patent 3885941 (1975).

11
- 58149163100
- I. Burn, U.S. Patent 4101952 (1978).
- I. Burn, U.S. Patent 4101952 (1978).

12
- 0014778041
- Biggers J.V., Marshall G.L., and Strickler D.W. Solid State Technol. 13 (1970) 63
- (1970) Solid State Technol. , Issue.13 , pp. 63
- Biggers, J.V.¹ Marshall, G.L.² Strickler, D.W.³

13
- 3142703615
- Hoppert H., and ffmann H. Ber. Dt. Keram. Ges. 55 (1978) 360
- (1978) Ber. Dt. Keram. Ges. , vol.55 , pp. 360
- Hoppert, H.¹ ffmann, H.²

14
- 0028404541
- Kuromitsu Y., Wang S.F., Yoshikawa S., and Newnham R.E. J. Am. Ceram. Soc. 77 (1994) 852
- (1994) J. Am. Ceram. Soc. , vol.77 , pp. 852
- Kuromitsu, Y.¹ Wang, S.F.² Yoshikawa, S.³ Newnham, R.E.⁴

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