Band-edge absorption spectroscopy of CdSe / a -SiOx multilayer nanocomposites

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 41, Issue 3, 2009, Pages 436-440

  Shepelyavyj, P E ^a   Indutnyj, I Z ^a   Bryksa, V P ^a   Kunets, Vas P ^a   Kunets, V P ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

Author keywords

Band edge absorption; Multilayer nanocomposites; Nanocrystals; Oxidation

Indexed keywords

ABSORPTION; ATOMIC PHYSICS; BINDING ENERGY; CADMIUM ALLOYS; CADMIUM COMPOUNDS; ELECTROMAGNETIC WAVE ABSORPTION; ENERGY ABSORPTION; LIGHT ABSORPTION; MULTILAYERS; NANOCOMPOSITES; NANOCRYSTALLINE ALLOYS; NANOCRYSTALS; OXIDATION; OXIDE MINERALS; QUARTZ; SILICON COMPOUNDS; SPECTRUM ANALYSIS; VACUUM DEPOSITION;

AREAL DENSITIES; ATOMIC DISTANCES; AVERAGE SIZES; BAND-EDGE ABSORPTION; CDSE NANOCRYSTALS; GAP ENERGIES; OPTICAL ABSORPTIONS; OPTICAL BANDS; PM3 METHODS; QUARTZ SUBSTRATES; STRONG CONFINEMENTS; THIN LAYERS;

ABSORPTION SPECTROSCOPY;

EID: 58149159725     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2008.09.003     Document Type: Article

References (28)

1. Ekimov A.I., and Onushchenko A.A. J. Experiment. Theoret. Phys. Lett. JETP Lett. 34 (1982) 346
2. Efros Al.L., and Efros A.L. Semiconductors 16 (1982) 772
3. Nesheva D., and Optoelectron J. Adv. Mater. 3 (2001) 882
4. Murray C.B., Norris D.J., and Bawendi A.L. J. Amer. Chem. Soc. 115 (1993) 8706
5. Alivisatos A.L. Science 271 (1996) 933
6. Peng Z.A., and Peng X. J. Amer. Chem. Soc. 123 (2001) 183
7. Henneberger F., Puls J., Spiegelberg Ch., Schulzgen A., Rossman H., Jungnickel V., and Ekimov A.I. Semicond. Sci. Technol. 6 (1991) A41
8. Torimoto T., Murakami S.-Y., Sakuraoka M., Iwasaki K., Okazaki K.-I., Shibayama T., and Ohtani B. J. Phys. Chem. B 110 (2006) 13314
9. Woelfle C., and Claus R. Nanotechnology 18 (2007) 025402
10. Surgent E.H. Adv. Mater. 17 (2005) 515
11. Kulish N.R., Kunets V.P., and Lisitsa M.P. Phys. Solid State 39 (1997) 1667
12. Kunets V.P. Semicond. Phys. Quantum Electron. Optoelectron. 2 (1999) 23
13. Peng X., Wickham J., and Alivisatos A.P. J. Amer. Chem. Soc. 120 (1998) 5343
14. Vossmeyer T., Katsikas L., Gienig M., Popovic I.G., Diesner K., Chemseddine A., Eychmiiller A., and Weller H. J. Phys. Chem. 98 (1994) 7665
15. Nesheva D., Levi Z., Aneva Z., Nikolova V., and Hofmeister H. J. Phys. Condens. Matter 12 (2000) 751
16. Nesheva D., and Hofmeister H. Solid State Comm. 114 (2000) 511
17. Lee M.J., Langford R.M., Wright S.W., Judge C.P., Chater R.J., and Tate T.J. J. Electron. Mater. 29 (2000) 418
18. I.Z. Indutnyi, A.I. Stetsun, in: Proceedings of the SPIE, vol. 2113, 1993, p. 55.
19. Urbach F. Phys. Rev. 92 (1953) 1324
20. Kunets V.P., Kulish N.R., Kunets Vas.P., and Lisitsa M.P. Semicond. Phys. Quantum Electron. Optoelectron. 5 (2002) 9
21. Cardona M. J. Phys. Chem. Solids 24 (1963) 1543
22. Baban C., Rusu G.I., and Prepelita P. J. Optoelectron. Adv. Mater. 7 (2005) 817
23. Nesheva D., Arsova D., and Ionov R. J. Mater. Sci. 28 (1993) 2183
24. Nesheva D., Raptis C., and Levi Z. Phys. Rev. 58 (1998) 7913
25. Dvurechenskii A.V., and Yakimov A.I. Semiconductors 35 (2001) 1095
26. Wang H., Zu Y., and Ong P.P. J. Appl. Phys. 90 (2001) 964
27. Masson D.P., Lockwood D.J., and Graham M.J. J. Appl. Phys. 82 (1997) 1632
28. Wang H., Zhu Y., and Ong P.P. J. Cryst. Growth 220 (2000) 554