메뉴 건너뛰기




Volumn 2, Issue 12, 2008, Pages 2526-2530

Transformation of unipolar single-walled carbon nanotube field effect transistors to ambipolar induced by polystyrene nanosphere assembly

Author keywords

Amblpolar; Field effect transistors (FETs); Polystyrene nanospheres; Single walled carbon nanotube (SWNT)

Indexed keywords

CARBON NANOTUBES; ELECTRIC FIELDS; MESFET DEVICES; MOLYBDENUM; NANOCOMPOSITES; NANOSPHERES; NANOTUBES; POLYSTYRENES; SINGLE-WALLED CARBON NANOTUBES (SWCN); TRANSISTORS;

EID: 58149156267     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn800706v     Document Type: Article
Times cited : (10)

References (13)
  • 3
    • 79956000382 scopus 로고    scopus 로고
    • Controlling Doping and Carrier Injection in Carbon Nanotube Transistors
    • Derycke, V.; Martel, R.; Appenzeller, J.; Avouris, P. Controlling Doping and Carrier Injection in Carbon Nanotube Transistors. Appl. Phys. Lett. 2002, 80, 2773-2775.
    • (2002) Appl. Phys. Lett , vol.80 , pp. 2773-2775
    • Derycke, V.1    Martel, R.2    Appenzeller, J.3    Avouris, P.4
  • 4
    • 0036919986 scopus 로고    scopus 로고
    • Molecular Electronics with Carbon Nanotubes
    • Avouris, P. Molecular Electronics with Carbon Nanotubes. Acc. Chem. Res. 2002, 35, 1026-1034.
    • (2002) Acc. Chem. Res , vol.35 , pp. 1026-1034
    • Avouris, P.1
  • 5
    • 2642569912 scopus 로고    scopus 로고
    • Ambipolar-to-Unipolar Conversion of Carbon Nanotube Transistors by Gate Structure Engineering
    • Lin, Y.; Appenzeller, J.; Avouris, P. Ambipolar-to-Unipolar Conversion of Carbon Nanotube Transistors by Gate Structure Engineering. Nano Lett. 2004, 4, 947-950.
    • (2004) Nano Lett , vol.4 , pp. 947-950
    • Lin, Y.1    Appenzeller, J.2    Avouris, P.3
  • 6
    • 34748848011 scopus 로고    scopus 로고
    • Current Instability of Carbon Nanotube Field Effect Transistors
    • Peng, N.; Zhang, Q.; Yuan, S.; Li, H.; Tian, J.; Chan, L. Current Instability of Carbon Nanotube Field Effect Transistors. Nanotechnology 2007, 18, 424035-1-424035-5.
    • (2007) Nanotechnology , vol.18
    • Peng, N.1    Zhang, Q.2    Yuan, S.3    Li, H.4    Tian, J.5    Chan, L.6
  • 7
    • 0034618507 scopus 로고    scopus 로고
    • Electrochemical Deposition of Macroporous Platinum, Palladium and Cobalt Films Using Polystyrene Latex Sphere Templates
    • Bartlett, P. N.; Birkin, P. R.; Ghanem, M. A. Electrochemical Deposition of Macroporous Platinum, Palladium and Cobalt Films Using Polystyrene Latex Sphere Templates. Chem. Commun. 2000, 1671-1672.
    • (2000) Chem. Commun , pp. 1671-1672
    • Bartlett, P.N.1    Birkin, P.R.2    Ghanem, M.A.3
  • 8
    • 0036263959 scopus 로고    scopus 로고
    • Highly Ordered Macroporous Gold and Platinum Films Formed by Electrochemical Deposition through Templates Assembled from Submicron Diameter Monodisperse Polystyrene Spheres
    • Bartlett, P. N.; Baumberg, J. J.; Birkin, P. R.; Ghanem, M. A.; Netti, M. C. Highly Ordered Macroporous Gold and Platinum Films Formed by Electrochemical Deposition through Templates Assembled from Submicron Diameter Monodisperse Polystyrene Spheres. Chem. Mater. 2002, 14, 2199-2208.
    • (2002) Chem. Mater , vol.14 , pp. 2199-2208
    • Bartlett, P.N.1    Baumberg, J.J.2    Birkin, P.R.3    Ghanem, M.A.4    Netti, M.C.5
  • 10
    • 23144462910 scopus 로고    scopus 로고
    • The Role of Metal-Nanotube Contact in the Performance of Carbon Nanotube Field-Effect Transistors
    • Chen, Z.; Appenzeller, J.; Knoch, J.; Lin, Y.; Avouris, P. The Role of Metal-Nanotube Contact in the Performance of Carbon Nanotube Field-Effect Transistors. Nano Lett. 2005, 5, 1497-1502.
    • (2005) Nano Lett , vol.5 , pp. 1497-1502
    • Chen, Z.1    Appenzeller, J.2    Knoch, J.3    Lin, Y.4    Avouris, P.5
  • 11
    • 0842266535 scopus 로고    scopus 로고
    • Javey, A.; Wang, Q.; Kim, W.; Dai, H. Advancements in Complementary Carbon Nanotube Field-Effect Transistors. IEEE Int. Electron Devices Meet 2003, 31.2.1-31.2.4.
    • Javey, A.; Wang, Q.; Kim, W.; Dai, H. Advancements in Complementary Carbon Nanotube Field-Effect Transistors. IEEE Int. Electron Devices Meet 2003, 31.2.1-31.2.4.
  • 12
    • 0042991275 scopus 로고    scopus 로고
    • Ballistic Carbon Nanotube Field-Effect Transistors
    • Javey, A.; Guo, J.; Wang, Q.; Lundstrom, M.; Dai, H. Ballistic Carbon Nanotube Field-Effect Transistors. Nature 2003, 424, 654-657.
    • (2003) Nature , vol.424 , pp. 654-657
    • Javey, A.1    Guo, J.2    Wang, Q.3    Lundstrom, M.4    Dai, H.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.