High gain × bandwidth product over 140-GHz planar junction AlInAs avalanche photodiodes

IEEE Photonics Technology Letters

Volumn 20, Issue 6, 2008, Pages 455-457

  Rouvié, Anne ^a   Carpentier, Daniéle ^a   Lagay, Nadine ^a   Décobert, Jean ^a   Pommereau, Frédéric ^a   Achouche, Mohand ^a  

^a ALCATEL THALES III V LAB   (France)

Author keywords

AlInAs; Avalanche photodiodes (APDs); Dark current; Excess noise factor; Gain bandwidth product; Multiplication

Indexed keywords

ALINAS; BANDWIDTH PRODUCT; EXCESS NOISE FACTOR; GAIN-BANDWIDTH PRODUCTS; HIGH GAIN; INP SUBSTRATES; PLANAR JUNCTIONS; RESPONSIVITY;

ANTIREFLECTION COATINGS; AVALANCHE PHOTODIODES; DARK CURRENTS; PHOTODIODES; SILICON NITRIDE;

BANDWIDTH;

EID: 58049087539     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2008.918229     Document Type: Article

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