4X reticles with 3% linewidth control for the development of 0.18-um lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 2884, Issue , 1996, Pages 290-301

  Jonckheere, Rik M ^a   Moonens, Jozef ^a   Potoms, Goedele ^a   Bovie, Inga ^a   Van Den Hove, Luc ^a  

^a IMEC   (Belgium)

Author keywords

0.18 m lithography; e beam proximity correction; Electron beam lithography; Linewidth control; Mask making; Mask pattern data; Optical proximity correction

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; ELECTRON BEAMS; ELECTRON GUNS; EXPERIMENTS; LINEWIDTH; MASKS; MICROMETERS; OPTICAL INSTRUMENTS; OPTICAL RESOLVING POWER; PARTICLE BEAMS; THICKNESS MEASUREMENT;

E-BEAM PROXIMITY CORRECTION; LINEWIDTH CONTROL; MASK MAKING; MASK PATTERN DATA; OPTICAL PROXIMITY CORRECTION;

INTEGRATED OPTOELECTRONICS;

EID: 57949085188     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.262811     Document Type: Conference Paper

References (6)

1. U. Hofmann et al., "Hierarchical proximity correction using CAPROX", presented at the 15th BACUS Symposium on Photomask technology and Manegement, 1995
2. U. Hofmann et al., "Hierarchical E-beam Proximity Correction in Mask Making", Proceedings SPIE Symposium on Microlithography, Vol. 2723, p. 150, 1996
3. A.-M. Goethals et al., "Top surface imaging and optical proximity correction : a way to 0.18 μm lithography at 248 nm", Proceedings SPIE Symposium on Microlithography, Vol. 2726, p. 362,1996
4. A. Yen et al., "Characterization and correction of optical proximity effects in deep-UV Lithography using behavior modeling", presented at EIPB96, Atlanta, 1996
5. R. Jonckheere et al., "Optical proximity correction : mask pattern generation challenges", Microelectronic Engineering 30, p. 115, 1996
6. K.-H. Kim et al., "Feasibility demonstration of 0.18 μm and 0.13 μm optical projection lithography based on CD control calculations", Symposium on VLSI Technology Digest of Technical Papers, p. 186, 1996