First-principles study of narrow single-walled GaN nanotubes

Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 373, Issue 3, 2009, Pages 367-370

  Guo, Yanhua ^a   Yan, Xiaohong ^a   Yang, Yurong ^a  

^a NANJING UNIVERSITY OF AERONAUTICS AND ASTRONAUTICS   (China)

Author keywords

Electronic structure; First principles calculations; Narrow GaN nanotubes

Indexed keywords

CALCULATIONS; DENSITY FUNCTIONAL THEORY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; ENERGY GAP; GALLIUM NITRIDE; III-V SEMICONDUCTORS; NANOTUBES; WIDE BAND GAP SEMICONDUCTORS;

DENSITY-FUNCTIONAL METHODS; FIRST-PRINCIPLES CALCULATION; FIRST-PRINCIPLES STUDY; GAN NANOTUBES; GENERALIZED GRADIENT APPROXIMATIONS; HYBRIDIZATION EFFECTS; INDIRECT BAND GAP; STRUCTURAL AND ELECTRONIC PROPERTIES;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 57849149425     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physleta.2008.10.033     Document Type: Article

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