Large-scale atomistic approach to random-dopant-induced characteristic variability in nanoscale CMOS digital and high-frequency integrated circuits

IEEE/ACM International Conference on Computer-Aided Design, Digest of Technical Papers, ICCAD

Volumn , Issue , 2008, Pages 278-285

  Li, Yiming ^a   Hwang, Chih Hong ^a   Yeh, Ta Ching ^a   Li, Tien Yen ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Device variability; Digital circuit; Fluctuation; High frequency circuit; Random dopant; Timing

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER AIDED DESIGN; DIGITAL CIRCUITS; DIGITAL INTEGRATED CIRCUITS; DOPING (ADDITIVES); INTEGRATED CIRCUITS; MOS CAPACITORS; MOSFET DEVICES; NETWORKS (CIRCUITS); RANDOM PROCESSES; TIME MEASUREMENT; TIMING CIRCUITS;

DEVICE VARIABILITY; FLUCTUATION; HIGH FREQUENCY CIRCUIT; RANDOM DOPANT; TIMING;

COUPLED CIRCUITS;

EID: 57849100078     PISSN: 10923152     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICCAD.2008.4681586     Document Type: Conference Paper

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