Electrical properties of a-Si:H thin films as a function of bonding configuration

Solar Energy Materials and Solar Cells

Volumn 93, Issue 2, 2009, Pages 239-243

  Kim, Do Yun ^a   Kim, In Soo ^a   Choi, Se Young ^a  

^a Yonsei University   (South Korea)

Author keywords

Bonding configuration; Hydrogenated amorphous silicon; Microvoid; Photosensitivity; Residual strain

Indexed keywords

ABSORPTION; AMORPHOUS FILMS; CRYSTAL GROWTH; ELECTRIC CONDUCTIVITY; ELECTRIC PROPERTIES; GRAIN BOUNDARIES; HYDROGEN; HYDROGENATION; INFRARED ABSORPTION; LIGHT SENSITIVE MATERIALS; MAGNETRON SPUTTERING; MICROCRYSTALLINE SILICON; NONMETALS; OPTICAL PROPERTIES; PHOTOSENSITIVITY; SEMICONDUCTING SILICON COMPOUNDS; SILICON; THIN FILMS;

BONDING CONFIGURATION; DARK CONDUCTIVITIES; ELECTRICAL PROPERTIES; HYDROGEN CONCENTRATIONS; HYDROGEN FLOWS; HYDROGENATED AMORPHOUS SILICON; IR ABSORPTIONS; MICRO VOIDS; MICROVOID; RADIO FREQUENCIES; RESIDUAL STRAIN; SI:H THIN FILMS; STRETCHING MODES; WORKING PRESSURES;

AMORPHOUS SILICON;

EID: 57749201379     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2008.10.003     Document Type: Article

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