Adjusting to 3D devices in a 2D device world

Proceedings - IEEE International SOI Conference

Volumn , Issue , 2008, Pages 115-116

  Harris, H R ^a   Adhikari, H ^b   Smith, C E ^b   Smith, G ^b   Yang, J W ^a   Majhi, P ^b   Jammy, R ^b  

^a TEXAS A AND M UNIVERSITY   (United States)

^b SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

3 DIMENSIONAL; 3D PROCESSING; ANALYSIS METHODS; HISTORICAL PERSPECTIVES; IN PROCESSING; NEW DEVICES; SHORT-CHANNEL EFFECTS;

EID: 57749170254     PISSN: 1078621X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SOI.2008.4656321     Document Type: Conference Paper

References (5)

1. Ohkura et al., TED ED-26, pp. 430, Apr. 1979.
2. J. Kavalerios, VLSI 2006.
3. ITRS. Austin, TX: SIA/SEMATECH, 2007.
4. A. Asenov et al., IEEE T-ED, pp. 1837, Sep. 2003
5. S.H. Kim, et al, TED 53, pp. 2143, 2003.