Modeling Coulomb effects in nanoscale devices

Journal of Computational and Theoretical Nanoscience

Volumn 5, Issue 9, 2008, Pages 1793-1827

  Vasileska, D ^a   Khan, H R ^a   Ahmed, S S ^a  

^a Arizona State University   (United States)

Author keywords

Discrete impurity effects; Nanodevice modeling; Unintentional doping

Indexed keywords

COULOMB BLOCKADE; DOPING (ADDITIVES); DYNAMICS; MOLECULAR DYNAMICS; MOSFET DEVICES; NANOSTRUCTURED MATERIALS; QUANTUM CHEMISTRY;

COULOMB EFFECTS; DEVICE DESIGNS; DEVICE OPERATIONS; DISCRETE IMPURITY EFFECTS; DOPANT ATOMS; FINFETS; MONTE CARLO; NANODEVICE MODELING; NANOSCALE DEVICES; NARROW WIRES; RANDOM LOCATIONS; SOI DEVICES; STATE OF THE ARTS; UNINTENTIONAL DOPING;

THREE DIMENSIONAL;

EID: 57649200132     PISSN: 15461955     EISSN: None     Source Type: Journal    
DOI: 10.1166/jctn.2008.901     Document Type: Review

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