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Volumn 3214, Issue , 1997, Pages 104-109
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Novel MOCVD processes for nanoscale dielectric and ferroelectric thin films
a
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Author keywords
Dielectrics; Ferroelectrics; Memory; MOCVD
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Indexed keywords
BARIUM;
CHEMICAL VAPOR DEPOSITION;
DATA STORAGE EQUIPMENT;
DEPOSITION RATES;
DIELECTRIC MATERIALS;
FERROELECTRIC MATERIALS;
FERROELECTRIC THIN FILMS;
FERROELECTRICITY;
FILM GROWTH;
GROWTH (MATERIALS);
INTEGRATED CIRCUITS;
MOLECULAR BEAM EPITAXY;
NANOSTRUCTURED MATERIALS;
NANOTECHNOLOGY;
NIOBIUM;
OXIDE FILMS;
PIEZOELECTRIC ACTUATORS;
PIEZOELECTRIC MATERIALS;
PIEZOELECTRIC TRANSDUCERS;
PLASMA DEPOSITION;
PLASMA STABILITY;
PLASMAS;
PLATINUM;
SEMICONDUCTING LEAD COMPOUNDS;
SEMICONDUCTING SILICON COMPOUNDS;
SILICON WAFERS;
SOLIDS;
SUBSTRATES;
TANTALUM;
THIN FILMS;
DEPOSITION TEMPERATURES;
DIELECTRIC AND FERROELECTRIC PROPERTIES;
DIELECTRICS;
ELEVATED TEMPERATURES;
FERROELECTRIC PROPERTIES;
FERROELECTRICS;
HIGH DENSITIES;
HIGH DIELECTRIC CONSTANTS;
HIGH QUALITIES;
HIGH SPEED ROTATIONS;
LARGE SIZES;
LIQUID DELIVERIES;
LIQUID DELIVERY SYSTEMS;
MEMORY;
MOCVD;
MOCVD PRECURSORS;
NANOSCALE;
NANOSCALE OXIDES;
NANOSCALE THICKNESSES;
REPRODUCIBILITY;
THERMAL STABILITIES;
THICKNESS UNIFORMITIES;
FERROELECTRIC FILMS;
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EID: 57649199802
PISSN: 0277786X
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1117/12.284656 Document Type: Conference Paper |
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Times cited : (2)
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References (10)
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