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Volumn 3213, Issue , 1997, Pages 101-107
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Model-based control of Chemical Mechanical Polishing
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Author keywords
Chemical mechanical planarization; CMP; Model predictive control; Run to run control
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Indexed keywords
CHEMICAL MECHANICAL PLANARIZATION;
CMP;
CMP TOOLS;
CONTROL ALGORITHMS;
CONTROL MODELS;
MODEL-BASED;
PLANARIZATION;
POLISHING PADS;
POLISHING TIMES;
REMOVAL RATES;
RUN-TO-RUN CONTROL;
SILICON OXIDES;
SILICON WAFER SURFACES;
THEORETICAL MODELS;
TIME VARIATIONS;
CHEMICAL EQUIPMENT;
CHEMICAL MECHANICAL POLISHING;
CHEMICAL POLISHING;
CONTROL THEORY;
INTEGRATED CIRCUITS;
MATHEMATICAL MODELS;
MECHANICAL CONTROL EQUIPMENT;
METAL RECOVERY;
MODEL PREDICTIVE CONTROL;
NANOTECHNOLOGY;
POLISHING;
PREDICTIVE CONTROL SYSTEMS;
ROBUST CONTROL;
SEMICONDUCTING SILICON COMPOUNDS;
SILICA;
SILICON COMPOUNDS;
SILICON WAFERS;
PROCESS CONTROL;
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EID: 57649198949
PISSN: 0277786X
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1117/12.284626 Document Type: Conference Paper |
Times cited : (2)
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References (8)
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