![]() |
Volumn 70, Issue 1, 2009, Pages 180-185
|
Electronic structure of BN nanotubes with intrinsic defects NB and BN and isoelectronic substitutional impurities PN, AsN, SbN, InB, GaB, and AlB
|
Author keywords
A. Nanostructures; C. Ab initio calculations; D. Electronic structure
|
Indexed keywords
ARSENIC;
ATOMIC PHYSICS;
ATOMIC SPECTROSCOPY;
ATOMS;
BAND STRUCTURE;
BORON;
BORON NITRIDE;
DEFECT STRUCTURES;
DEFECTS;
ELECTRIC PROPERTIES;
ELECTRONIC PROPERTIES;
ELECTRONIC STRUCTURE;
ELECTRONS;
GALLIUM ALLOYS;
IMPURITIES;
NANOSTRUCTURES;
NANOTUBES;
NITRIDES;
NONMETALS;
PHOSPHORUS;
PHOTOELECTRON SPECTROSCOPY;
SPECTROSCOPIC ANALYSIS;
TIN;
TITANIUM COMPOUNDS;
A. NANOSTRUCTURES;
ATOMIC CENTERS;
BN NANOTUBES;
BORON ATOMS;
C. AB INITIO CALCULATIONS;
CYLINDRICAL WAVES;
D. ELECTRONIC STRUCTURE;
DEFECT BANDS;
DOPED SYSTEMS;
ELECTRICAL PROPERTIES;
ELECTRON POTENTIALS;
ELECTRONIC DEVICES;
ELECTRONIC SPECTRUMS;
ENERGY REGIONS;
EXTENDED DEFECTS;
INTRINSIC DEFECTS;
LOCAL DENSITY FUNCTIONAL;
NITROGEN ATOMS;
OPTICAL GAPS;
OPTICAL-;
PARTIAL SUBSTITUTIONS;
SPACE BETWEEN;
SUBSTITUTIONAL IMPURITIES;
UNIT CELLS;
ELECTRON ENERGY LOSS SPECTROSCOPY;
|
EID: 57649193449
PISSN: 00223697
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jpcs.2008.10.002 Document Type: Article |
Times cited : (26)
|
References (14)
|