SCOPUS 정보 검색 플랫폼

Journal of Physics and Chemistry of Solids

Volumn 70, Issue 1, 2009, Pages 180-185

Electronic structure of BN nanotubes with intrinsic defects NB and BN and isoelectronic substitutional impurities PN, AsN, SbN, InB, GaB, and AlB

(2) D'yachkov, P N a Makaev, D V a

a KURNAKOV INSTITUTE OF GENERAL AND INORGANIC CHEMISTRY (Russian Federation)

Author keywords

A. Nanostructures; C. Ab initio calculations; D. Electronic structure

Indexed keywords

ARSENIC; ATOMIC PHYSICS; ATOMIC SPECTROSCOPY; ATOMS; BAND STRUCTURE; BORON; BORON NITRIDE; DEFECT STRUCTURES; DEFECTS; ELECTRIC PROPERTIES; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; ELECTRONS; GALLIUM ALLOYS; IMPURITIES; NANOSTRUCTURES; NANOTUBES; NITRIDES; NONMETALS; PHOSPHORUS; PHOTOELECTRON SPECTROSCOPY; SPECTROSCOPIC ANALYSIS; TIN; TITANIUM COMPOUNDS;

A. NANOSTRUCTURES; ATOMIC CENTERS; BN NANOTUBES; BORON ATOMS; C. AB INITIO CALCULATIONS; CYLINDRICAL WAVES; D. ELECTRONIC STRUCTURE; DEFECT BANDS; DOPED SYSTEMS; ELECTRICAL PROPERTIES; ELECTRON POTENTIALS; ELECTRONIC DEVICES; ELECTRONIC SPECTRUMS; ENERGY REGIONS; EXTENDED DEFECTS; INTRINSIC DEFECTS; LOCAL DENSITY FUNCTIONAL; NITROGEN ATOMS; OPTICAL GAPS; OPTICAL-; PARTIAL SUBSTITUTIONS; SPACE BETWEEN; SUBSTITUTIONAL IMPURITIES; UNIT CELLS;

ELECTRON ENERGY LOSS SPECTROSCOPY;

EID: 57649193449 PISSN: 00223697 EISSN: None Source Type: Journal
DOI: 10.1016/j.jpcs.2008.10.002 Document Type: Article

Times cited : (27)

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