메뉴 건너뛰기




Volumn 70, Issue 1, 2009, Pages 180-185

Electronic structure of BN nanotubes with intrinsic defects NB and BN and isoelectronic substitutional impurities PN, AsN, SbN, InB, GaB, and AlB

Author keywords

A. Nanostructures; C. Ab initio calculations; D. Electronic structure

Indexed keywords

ARSENIC; ATOMIC PHYSICS; ATOMIC SPECTROSCOPY; ATOMS; BAND STRUCTURE; BORON; BORON NITRIDE; DEFECT STRUCTURES; DEFECTS; ELECTRIC PROPERTIES; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; ELECTRONS; GALLIUM ALLOYS; IMPURITIES; NANOSTRUCTURES; NANOTUBES; NITRIDES; NONMETALS; PHOSPHORUS; PHOTOELECTRON SPECTROSCOPY; SPECTROSCOPIC ANALYSIS; TIN; TITANIUM COMPOUNDS;

EID: 57649193449     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jpcs.2008.10.002     Document Type: Article
Times cited : (26)

References (14)
  • 1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.