Characterization of MoSe2 thin film deposited at room temperature from solution phase

Journal of Crystal Growth

Volumn 311, Issue 1, 2008, Pages 15-19

  Hankare, P P ^a   Patil, A A ^a   Chate, P A ^b   Garadkar, K M ^a   Sathe, D J ^c   Manikshete, A H ^c   Mulla, I S ^d  

^a SHIVAJI UNIVERSITY   (India)

^b JSM College   (India)

^c Walchand College of Arts and Science   (India)

^d NATIONAL CHEMICAL LABORATORY   (India)

Author keywords

A1. Crystal morphology; A1. X ray diffraction; A2. Growth from solution; A3. Polycrystalline deposition; B1. Inorganic compound; B2. Semiconducting materials

Indexed keywords

AMMONIUM COMPOUNDS; CHEMICAL REACTIONS; DIFFRACTION; ELECTRIC CONDUCTIVITY; GROWTH (MATERIALS); HYDRATES; INORGANIC COMPOUNDS; MOLYBDENUM; MORPHOLOGY; OPTICAL MICROSCOPY; SCANNING ELECTRON MICROSCOPY; SELENIUM COMPOUNDS; SODIUM; SYNTHESIS (CHEMICAL); THIN FILM DEVICES; THIN FILMS; X RAY ANALYSIS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

A1. CRYSTAL MORPHOLOGY; A1. X-RAY DIFFRACTION; A2. GROWTH FROM SOLUTION; A3. POLYCRYSTALLINE DEPOSITION; B1. INORGANIC COMPOUND; B2. SEMICONDUCTING MATERIALS;

SEMICONDUCTOR GROWTH;

EID: 57649180933     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.09.188     Document Type: Article

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