Interfacial superconductivity in bilayer and multilayer IV-VI semiconductor heterostructures

Low Temperature Physics

Volumn 34, Issue 12, 2008, Pages 985-991

  Yuzephovich, O I ^a,b,c   Mikhailov, M Yu ^a   Bengus, S V ^a,c   Aladyshkin, A Yu ^d   Pestov, E E ^d   Nozdrin, Yu N ^d   Sipatov, A Yu ^e   Buchstab, E I ^c   Fogel, N Ya ^c  

^a B VERKIN INSTITUTE FOR LOW TEMPERATURE PHYSICS AND ENGINEERING   (Ukraine)

^b TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^c INTERNATIONAL LABORATORY OF HIGH MAGNETIC FIELDS AND LOW TEMPERATURES   (Poland)

^d INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

^e NATIONAL TECHNICAL UNIVERSITY   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

IV-VI SEMICONDUCTORS; MULTILAYERS; NARROW BAND GAP SEMICONDUCTORS; TEMPERATURE;

CRITICAL TEMPERATURES; EPITAXIAL HETEROSTRUCTURES; NARROW-GAP SEMICONDUCTORS; SEMICONDUCTOR HETEROSTRUCTURES; SEMICONDUCTOR LAYERS; SUPERCONDUCTING PROPERTIES; SUPERCONDUCTING TRANSITIONS; UPPER CRITICAL MAGNETIC FIELDS;

HETEROJUNCTIONS;

EID: 57649158245     PISSN: 1063777X     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3029751     Document Type: Article

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