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Volumn 3182, Issue , 1997, Pages 264-268
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Multyspectral photoelectric characteristics induced by metastable electronic states in PbTe(Ga)
a a a a |
Author keywords
Impurity centers; Photoconductivity; Semiconductors
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Indexed keywords
ATOMS;
CONDUCTION BANDS;
CRYSTAL IMPURITIES;
CRYSTALLOGRAPHY;
CRYSTALS;
ELECTRIC CONDUCTIVITY;
ELECTRON MOBILITY;
GROUND STATE;
GROWTH (MATERIALS);
HEAT CONDUCTION;
MATERIALS SCIENCE;
OPTOELECTRONIC DEVICES;
PHOTOCONDUCTIVITY;
PHOTOELECTRICITY;
PHOTOREFRACTIVE MATERIALS;
POINT DEFECTS;
RADIATION;
RELAXATION PROCESSES;
SEMICONDUCTOR GROWTH;
SINGLE CRYSTALS;
THICK FILMS;
ABSORPTION EDGES;
ADVANCED MATERIALS;
CHARACTERISTIC RELAXATION TIMES;
CONTINUOUS RADIATIONS;
CRYSTAL SYNTHESES;
ENERGY GAP VALUES;
ENERGY POSITIONS;
ENERGY SPECTRUMS;
EXPERIMENTAL DATUMS;
GROWTH TECHNIQUES;
HEAT SOURCES;
IMPURITY BANDS;
IMPURITY CENTERS;
IMPURITY STATES;
LOW INTENSITIES;
METASTABLE IMPURITY STATES;
METASTABLE STATES;
NEAR-IR;
PHENOMENOLOGICAL DESCRIPTIONS;
PHENOMENOLOGICAL MODELS;
PHOTO RESPONSES;
PHOTOELECTRIC CHARACTERISTICS;
PULSE DURATIONS;
RADIATION INTENSITIES;
RELATIVE AMPLITUDES;
SEMICONDUCTORS;
IMPURITIES;
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EID: 57649098586
PISSN: 0277786X
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1117/12.280441 Document Type: Conference Paper |
Times cited : (2)
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References (9)
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