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The substrates were fabricated by X-ray lithography for the purpose of large-scale microfabrication at ∼4 x 8 mm2
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57549100446
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The deposition on the sides of pillars is due to the slight tilt of the substrate to the direction of sputtered atoms. The thickness is estimated from the difference between the SEM images obtained before and after deposition
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The deposition on the sides of pillars is due to the slight tilt of the substrate to the direction of sputtered atoms. The thickness is estimated from the difference between the SEM images obtained before and after deposition.
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27
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57549106829
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In the field of 10 Oe, we assume ξH ≫ D for the relaxation measurement. This field yields ξH of 400-1000 nm using the values of θ. Thus, the expectation that ξH ≫ D in 10 Oe is quantitatively plausible
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H ≫ D in 10 Oe is quantitatively plausible.
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