Gated electron transfer of Yeast Iso-1 cytochrome c on self-assembled monolayer-coated electrodes

Journal of Physical Chemistry B

Volumn 112, Issue 47, 2008, Pages 15202-15211

  Feng, Jiu Ju ^a   Murgida, Daniel H ^b   Kuhlmann, Uwe ^a   Utesch, Tillmann ^a   Mroginski, Maria Andrea ^a   Hildebrandt, Peter ^a   Weidinger, Inez M ^a  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b Instituto de Quimica Fisica de los Materiales Medio Ambiente y Energia   (Argentina)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; COATED WIRE ELECTRODES; DIPOLE MOMENT; DYNAMICS; ELECTRIC DIPOLE MOMENTS; ELECTRIC FIELD EFFECTS; ELECTRIC FIELDS; ELECTRODES; ELECTRON ENERGY LEVELS; ELECTRON TRANSITIONS; MISSILE BASES; MOLECULAR DYNAMICS; MONOLAYERS; ORGANIC POLYMERS; PORPHYRINS; QUANTUM CHEMISTRY; SELF ASSEMBLED MONOLAYERS; SILVER; YEAST;

AG ELECTRODES; APPARENT RATE CONSTANTS; COATED ELECTRODES; CYTOCHROME C; ELECTRIC FIELD STRENGTHS; ELECTRON TRANSFER RATES; ELECTRON TRANSFERS; ELECTROSTATIC CALCULATIONS; ENERGY OF ACTIVATIONS; FIELD DEPENDENCES; IMPEDANCE MEASUREMENTS; LIMITING STEPS; MERCAPTOUNDECANOIC ACIDS; MOLECULAR DIPOLE MOMENTS; MOLECULAR DYNAMICS SIMULATIONS; NEGATIVE SHIFTS; REDOX POTENTIALS; REDOX PROCESSES; RESONANCE RAMAN; TIME-RESOLVED; VARIATIONS OF; YEAST CYTOCHROME C;

RATE CONSTANTS;

EID: 57449099053     PISSN: 15206106     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp8062383     Document Type: Article

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