Electronic properties of a near surface Si δ-doped GaAs under an applied electric field

Journal of Physics D: Applied Physics

Volumn 37, Issue 19, 2004, Pages 2655-2659

  Osvald, J ^a  

^a INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CARRIER CONCENTRATION; EIGENVALUES AND EIGENFUNCTIONS; ELECTRIC FIELDS; ELECTRONIC PROPERTIES; MATHEMATICAL MODELS; POISSON EQUATION; PROBABILITY DENSITY FUNCTION; SEMICONDUCTOR MATERIALS;

ELECTRON ENERGY STRUCTURES; LOCAL DENSITY APPROXIMATION (LDA); SCHRÖDINGER EQUATIONS; SUB-BAND ENERGY LEVELS;

SILICON ALLOYS;

EID: 5744227991     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/37/19/007     Document Type: Article

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