Photon detectors for confocal microscopy

Handbook of Biological Confocal Microscopy: Third Edition

Volumn , Issue , 2006, Pages 251-264

  Art, Jonathan ^a  

^a UNIVERSITY OF ILLINOIS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 57349161086     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1007/978-0-387-45524-2_12     Document Type: Chapter

References (29)

1. Brown, R. G. W., Jones, R., Rarity, J. G., and Ridley, K. D., 1987, Characterization of silicon avalanche photodiodes for photon correlation measurements. 2: Active quenching, Appl. Opt. 26:2383-2389.
2. Brown, R. G. W., Ridley, K. D., and Rarity, J. G., 1986, Characterization of silicon avalanche photodiodes for photon correlation measurements. 1: Passive quenching, Appl. Opt. 25:4122-4126.
3. Boyle, W. S., and Smith, G. E., 1970, Charge coupled semiconductor devices, Bell Sys. Tech. J. 49:587-593.
4. Burgess, R. E., 1956, The statistics of charge carrier fluctuations in semiconductors, Proc. Phys. Soc. B 69:1020-1027.
5. Coutures, J. L., and Boucharlat, G., 1988, A 2 × 2048 pixel bilinear CCD array for spectroscopy (TH 7832 CDZ). Adv. Electronics Electron Phys. 74:173-179.
6. Einstein, A., 1905, Uber einen die Erzeugung und Verwandlung des Lichtes betreffenden heuristischen Gesichtspunkt, Annalen der Physik 17:132-148.
7. Fairchild Weston Systems Inc., 1987, CCD Imaging and Signal Processing Catalog and Applications Handbook, Fairchild Weston Systems Inc. CCD Imaging Division, Sunnyvale, California.
8. Goldstein, S., 1989, A no-moving-parts video rate laser beam scanning type 2 confocal reflected/transmission microscope. J. Microsc. 153: RP1-RP2.
9. Hier, R. G., Zheng, W., Beaver, E. A., McIlwain, C. E., and Schmidt, G. W., 1988, Development of a CCD-digicon detector system, Adv. Electronics Electron Phys. 74:55-67.
10. Inoué, S., and Spring, K. R., 1997, Video Microscopy: The Fundamentals, Plenum Press, New York, pp, 1-741.
11. Jones, R., Oliver, C. J., and Pike, E. R., 1971, Experimental and theoretical comparison of photon-counting and current measurements of light intensity, Appl. Opt. 10:1673-1680.
12. Jorgensen, T. Jr., 1948, On probability generating functions, Am. J. Phys. 16:285-289.
13. Kittel, C., 1986, Introduction to Solid State Physics, 6th ed., John Wiley and Sons, New York, p. 646.
14. Kume, H., Koyama, K., Nakatsugawa, K., Suzuki, S., and Fatlowitz, D., 1986, Ultrafast microchannel plate photomultipliers, Appl. Opt. 27:1170-1178.
15. Lacaita, A., Cova, S., and Ghioni, M., 1988, Four-hundred-picosecond singlephoton timing with commercially available avalanche photodiodes, Rev. Sci. Instrum. 59:1115-1121.
16. Mackay, C. D., 1988, Cooled CCD systems for biomedical and other applications, Adv. Electronics Electron Phys. 74:129-133.
17. McMullan, D., 1988, Image recording in electron microscopy, Adv. Electronics Electron Phys. 74:147-156.
18. Mathur, D. P., McIntyre, R. J., and Webb, P. P., 1970, A new germanium photodiode with extended long-wavelength response, Appl. Opt. 9:1842-1847.
19. Petráň, M., Hadravsky, M., Egger, M. D., and Galambos, R., 1968, Tandem scanning reflected-light microscope, J. Opt. Soc. Am. 58:661-664.
20. Prescott, J. R., 1966, A statistical model for photomultiplier single-electron statistics, Nucl. Instrum. Methods 39:173-179.
21. Putley, E. H., 1977, Thermal detectors, In: Topics in Applied Physics, Vol. 19: Optical and Infrared Detectors (R. J. Keyes, ed.), Springer-Verlag, Berlin, pp. 71-100.
22. RCA, 1980, Photomultiplier Handbook, RCA Solid State Division, Lancaster, Pennsylvania.
23. Robben, F., 1971, Noise in the measurement of light with photomultipliers, Appl. Opt. 10:776-796.
24. Schwartz, M., 1970, Information Transmission, Modulation, and Noise, 2nd ed., McGraw-Hill, New York, p. 672.
25. Seib, D. H., and Aukerman, L. W., 1973, Photodetectors for the 0.1 to 1.0mm spectral region, Adv. Electronics Electron Phys. 34:95-221.
26. Siliconix Inc., 1986, Small-Signal FET Data Book, Siliconix Inc., Santa Clara, California.
27. Sharpless, W. M., 1970, Evaluation of a specially designed GaAs Schottkybarrier photodiode using 6328-nm radiation modulated at 4GHz, Appl. Opt. 9:489-494.
28. Sommer, A. H., 1968, Photoemissive Materials, John Wiley and Sons, New York, p. 255.
29. Van der Ziel, A., 1959, Fluctuation Phenomena in Semi-Conductors, Academic Press, New York.