Relief and trench formation on chalcogenide thin films using electron beams

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 6, 2008, Pages 2478-2483

  Hoffman, G B ^a   Liu, W C ^b   Zhou, W ^b   Sooryakumar, R ^b   Boolchand, P ^c   Reano, R M ^a  

^a The Ohio State University   (United States)

^b OHIO STATE UNIVERSITY   (United States)

^c 705 Engineering Research Center   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHALCOGENIDE GLASSES; CHALCOGENIDE THIN FILMS; COUPLED STRUCTURES; DIRECT WRITE; ELECTRON BEAM IRRADIATIONS; HIGH DOSES; OVERLAYER THICKNESSES; PHYSICAL MECHANISMS; STEP SIZES;

ELECTRON BEAMS; ELECTRON GUNS; ELECTRON IRRADIATION; ELECTRONS; GERMANIUM; INTEGRATED OPTOELECTRONICS; OPTICAL GLASS; OPTICAL WAVEGUIDES; PARTICLE BEAMS; PROBABILITY DENSITY FUNCTION; THICK FILMS; THIN FILMS; WAVEGUIDES;

AMORPHOUS FILMS;

EID: 57249104950     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3002564     Document Type: Article

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