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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 6, 2008, Pages 2179-2182

Fabrication of 200 nm period blazed transmission gratings on silicon-on-insulator wafers

(3) Ahn, Minseung a Heilmann, Ralf K a Schattenburg, Mark L a

a MASSACHUSETTS INSTITUTE OF TECHNOLOGY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRITICAL ANGLES; DUTY CYCLES; ETCH PROCESSES; HIGH ASPECT RATIOS; HIGH SILICON CONTENTS; HYDROGEN BUBBLES; IMPROVED PROCESSES; KOH ETCHINGS; KOH SOLUTIONS; POTASSIUM HYDROXIDE SOLUTIONS; PROCESS LATITUDES; ROOM TEMPERATURES; SIDE-WALLS; SILICON MEMBRANES; SILICON ON INSULATORS; SOI WAFERS; SPIN-ON; TRANSMISSION GRATINGS;

ASPECT RATIO; FABRICATION; HYDROGEN; MICROSENSORS; NITRIDES; NONMETALS; PHOTORESISTS; POLYMERS; POTASSIUM; POTASSIUM HYDROXIDE; PRESSURE DROP; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SURFACE ACTIVE AGENTS;

SILICON WAFERS;

EID: 57249103678 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.2968613 Document Type: Article

Times cited : (43)

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