Nanoparticles doped with TM and RE ions for applications in optoelectronics

Optical Materials

Volumn 31, Issue 3, 2009, Pages 490-495

  Godlewski, M ^a,b   Yatsunenko, S ^a   Nadolska, A ^b   Opalinska A ^c   Lojkowski W ^c   Drozdowicz Tomsia, K ^d   Goldys, E M ^d  

^a INSTITUTE OF PHYSICS   (Poland)

^b CARDINAL STEFAN WYSZY SKI UNIVERSITY   (Poland)

^c INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^d MACQUARIE UNIVERSITY   (Australia)

Author keywords

Nanoparticles; Radiative recombination processes; Rare earth ions; Transition metal ions

Indexed keywords

ENERGY GAP; LIGHT SOURCES; METAL IONS; NANOPARTICLES; RARE EARTH COMPOUNDS; RARE EARTHS; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING; SURFACE PLASMONS; TRANSITION METAL COMPOUNDS; TRANSITION METALS; WIDE BAND GAP SEMICONDUCTORS;

CARRIER CONFINEMENTS; CO-DOPING; DOPED NANOPARTICLES; EMISSION ENHANCEMENT; RADIATIVE RECOMBINATION PROCESS; RARE EARTH IONS; WHITE LIGHT EMITTING DIODES; WIDE BAND GAP;

METAL NANOPARTICLES;

EID: 57249100728     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.optmat.2007.10.020     Document Type: Article

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