Electronic properties of (Ga,Mn)N thin films with high Mn content

Journal of Applied Physics

Volumn 104, Issue 10, 2008, Pages

  Granville, S ^a,e   Ruck, B J ^a   Preston, A R H ^a   Stewart, T ^a   Budde, F ^a   Trodahl, H J ^a   Bittar, A ^b   Downes, J E ^c   Ridgway, M ^d  

^a VICTORIA UNIVERSITY OF WELLINGTON   (New Zealand)

^b CALLAGHAN INNOVATION   (New Zealand)

^c MACQUARIE UNIVERSITY   (Australia)

^d AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^e EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION BANDS; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRON MOBILITY; ELECTRONIC PROPERTIES; FERMI LEVEL; FERMIONS; GALLIUM NITRIDE; HEAT CONDUCTION; MANGANESE; SEMICONDUCTING GALLIUM; THICK FILMS; THREE DIMENSIONAL;

DC RESISTIVITIES; DOPANT LEVELS; INTERBAND; MN CONCENTRATIONS; MN CONTENTS; N FILMS; OPTICAL-; SHARP CONTRASTS;

MANGANESE COMPOUNDS;

EID: 57049128197     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3020536     Document Type: Article

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