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Applied Physics Express

Volumn 1, Issue 2, 2008, Pages

Tunnel magnetoresistance effect in magnetic tunnel junctions using a Co2MnSi(110) electrode

(5) Hattori, Masashi a Sakuraba, Yuya a Oogane, Mikihiko a Ando, Yasuo a Miyazaki, Terunobu a

a TOHOKU UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; ELECTRODES; MAGNETIC DEVICES; MAGNETIC FIELD EFFECTS; MAGNETOELECTRONICS; MAGNETORESISTANCE; MANGANESE COMPOUNDS; METALLIC SOAPS; SEMICONDUCTOR JUNCTIONS; STRONTIUM COMPOUNDS; TUNNELS; WAVEGUIDE JUNCTIONS;

HEUSLER ALLOYS; LARGE TUNNELS; LOW TEMPERATURES; MAGNETIC TUNNEL JUNCTIONS; METALLIC ELECTRODES; METALLIC ELECTRONIC STATES; METALLIC PROPERTIES; ROOM TEMPERATURES; TMR EFFECTS; TUNNEL MAGNETORESISTANCE EFFECTS; VOLTAGE CHARACTERISTICS;

TUNNEL JUNCTIONS;

EID: 57049101505 PISSN: 18820778 EISSN: 18820786 Source Type: Journal
DOI: 10.1143/APEX.1.021301 Document Type: Article

Times cited : (8)

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