Study of steady-state photoluminescence of AgInSe2 crystals

Thin Solid Films

Volumn 517, Issue 4, 2008, Pages 1445-1448

  Kishigui, Kaoru ^a   Abe, Kouji ^a   Murakami, Gou ^a   Shim, YungGu ^a   Yoshino, Kenji ^b   Wakita, Kazuki ^c  

^a Osaka Prefecture University   (Japan)

^b UNIVERSITY OF MIYAZAKI   (Japan)

^c CHIBA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

AgInSe2; Donor acceptor pair emission; Free exciton; Hot Press method; Photoluminescence

Indexed keywords

ACTIVATION ENERGY; BINDING ENERGY; CRYSTALLOGRAPHY; EMISSION SPECTROSCOPY; EXCITONS; LIGHT EMISSION; PHOTOLUMINESCENCE; PRESSES (MACHINE TOOLS); SEMICONDUCTOR QUANTUM WELLS;

AGINSE2; BOUND EXCITONS; DONOR LEVELS; DONOR-ACCEPTOR PAIR EMISSION; EDGE REGIONS; FREE EXCITON; FREE EXCITONS; HOT-PRESS METHOD; PL INTENSITIES; PRESS METHODS;

LUMINESCENCE;

EID: 56949085819     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.09.014     Document Type: Article

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