40-Gb/s direct modulation of 1.3-μm semi-insulating buried- heterostructure AlGaInAs MQW DFB lasers

Conference Digest - IEEE International Semiconductor Laser Conference

Volumn , Issue , 2008, Pages 19-20

  Otsubo, K ^a,b   Matsuda, M ^a,b   Takada, K ^a   Okumura, S ^a   Ekawa, M ^a,b   Yamamoto, T ^a,b  

^a FUJITSU LABORATORIES LTD   (Japan)

^b Optoelectronic Industry and Technology Development Association   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DISTRIBUTED FEEDBACK LASERS; ELECTRIC CONDUCTIVITY; HETEROJUNCTIONS; LASERS; MODULATION; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR QUANTUM WELLS;

ALGAINAS; DFB LASERS; DIRECT MODULATIONS; HETEROSTRUCTURE; RELAXATION OSCILLATION FREQUENCIES;

SEMICONDUCTOR LASERS;

EID: 56749177524     PISSN: 08999406     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISLC.2008.4635988     Document Type: Conference Paper

References (6)

1. K. Sato et al., Electron. Lett. 38, 15, 816-817 (2002).
2. O. Kjebon et al., International Conference on Indium Phosphide and Related Materials 2003, FA1.2 (2003).
3. K. Nakahara et al., IEEE Photon. Technol. Lett. 19, 19, 1436-1438 (2007).
4. U. Troppenz et al., European Conference on Optical Fiber Communication 2006, Th4.5.5 (2006).
5. C-E. Zah et al., IEEE J. Quantum. Electron. 30, 2, 511-523 (1994).
6. th International Semiconductor Laser Conference, TuA5 (2006).