High-efficiency GaN-based laser diodes for solid-state lighting

Conference Digest - IEEE International Semiconductor Laser Conference

Volumn , Issue , 2008, Pages 185-186

  Saito, S ^a   Hattori, Y ^a   Sugai, M ^a   Harada, Y ^a   Jongil, H ^a   Nunoue, S ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTIONS; LADDER NETWORKS; LASERS; LIGHT; LIGHT SOURCES; LIGHTING; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DIODES; SEMICONDUCTOR MATERIALS;

LASER DIODES; LUMINOUS FLUXES; SLOPE EFFICIENCIES; WHITE LIGHT SOURCES;

SEMICONDUCTOR LASERS;

EID: 56749175273     PISSN: 08999406     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISLC.2008.4636071     Document Type: Conference Paper

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