Three-step room-temperature cleaning of bare silicon surface for radical-reaction-based semiconductor manufacturing

Journal of the Electrochemical Society

Volumn 156, Issue 1, 2009, Pages

  Hasebe, Rui ^a   Teramoto, Akinobu ^a   Kuroda, Rihito ^a   Suwa, Tomoyuki ^a   Sugawa, Shigetoshi ^a   Ohmi, Tadahiro ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION (PROCESS); ELECTRIC CONDUCTIVITY; HYDROFLUORIC ACID; HYDROGEN; HYDROGEN PEROXIDE; IMPURITIES; ION BOMBARDMENT; KRYPTON; NONMETALS; OXIDATION; OXYGEN; OZONE WATER TREATMENT; PLASMA DIAGNOSTICS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR MATERIALS; SILICON; SILICON WAFERS; SUBSTRATES; SURFACE ACTIVE AGENTS; SURFACE REACTIONS; SURFACES; WELL EQUIPMENT; XENON;

CLEANING METHODS; FORMATION PROCESSES; FUNCTIONAL WATERS; HIGH DENSITIES; HYDROGEN TERMINATIONS; INSULATOR FILMS; MEGASONIC; METALLIC IMPURITIES; MICRO ROUGHNESSES; ORGANIC MATERIALS; OXYGEN RADICALS; PROCESS FLOWS; RADICAL NITRIDATION; ROOM TEMPERATURES; SEMICONDUCTOR MANUFACTURING; SILICON SUBSTRATES; SILICON SURFACES; SUBSTRATE SURFACES; SURFACTANT MOLECULES; ULTRAPURE WATERS; WAFER SURFACES;

SURFACE CLEANING;

EID: 56749174664     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2993153     Document Type: Article

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