Stoichiometric single crystal growth of AgGaS2 by iodine transport method and characterization

Crystal Research and Technology

Volumn 43, Issue 12, 2008, Pages 1292-1296

  Prabukanthan, P ^a   Dhanasekaran, R ^a  

^a ANNA UNIVERSITY   (India)

Author keywords

Growth from vapor; Ternary semiconductors; X ray characterization

Indexed keywords

COPPER COMPOUNDS; CRYSTAL GROWTH; CRYSTALLOGRAPHY; CRYSTALS; DIFFRACTION; ELECTRIC CONDUCTIVITY; EMISSION SPECTROSCOPY; GRAIN BOUNDARIES; INDUSTRIAL CHEMICALS; IODINE; LIGHT EMISSION; LUMINESCENCE; POWDERS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR MATERIALS; VAPORS; X RAY ANALYSIS; X RAY DIFFRACTION; X RAYS;

BAND EDGES; BAND GAPS; CHALCOPYRITE STRUCTURES; CHEMICAL VAPOR TRANSPORTS; ENERGY DISPERSIVE; GROWTH FROM VAPOR; HIGH QUALITIES; OPTICAL TRANSMISSIONS; RAY ANALYSES; ROCKING CURVES; SEMI-CONDUCTORS; SINGLE CRYSTAL GROWTHS; SINGLE CRYSTAL X-RAY DIFFRACTIONS; TERNARY SEMICONDUCTORS; TRANSPORT METHODS; TRANSPORTING AGENTS; X-RAY CHARACTERIZATION; X-RAY DIFFRACTIONS; ZONE TEMPERATURES;

SINGLE CRYSTALS;

EID: 56749097571     PISSN: 02321300     EISSN: 15214079     Source Type: Journal    
DOI: 10.1002/crat.200800055     Document Type: Article

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