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Volumn 55, Issue 11, 2008, Pages 3096-3106

Integration of self-assembled metal-catalyzed semiconductor nanowires for sensors and large-area electronics

Author keywords

Nanotechnology; Semiconductor devices; Semiconductor materials; Sensors; Transducers

Indexed keywords

CATALYSIS; ELECTRIC CONDUCTIVITY; ELECTRIC WIRE; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR GROWTH; SENSORS; SILICON; SUBSTRATES;

EID: 56649123423     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.2005177     Document Type: Article
Times cited : (3)

References (43)
  • 2
    • 0032498174 scopus 로고    scopus 로고
    • A laser ablation method for the synthesis of crystalline semiconductor nanowires
    • Jan. 9
    • A. M. Morales and C. M. Lieber, "A laser ablation method for the synthesis of crystalline semiconductor nanowires," Science, vol. 279, no. 5348, pp. 208-211, Jan. 9, 1998.
    • (1998) Science , vol.279 , Issue.5348 , pp. 208-211
    • Morales, A.M.1    Lieber, C.M.2
  • 3
    • 0000434281 scopus 로고    scopus 로고
    • Ti-catalyzed Si nanowires by chentical vapor deposition: Microscopy and growth mechanisms
    • Jan. 15
    • T. I. Kamins, R. S. Williams, D. P. Basile, T. Hesjedal, and J. S. Harris, "Ti-catalyzed Si nanowires by chentical vapor deposition: Microscopy and growth mechanisms," J. Appl. Phys., vol. 89, no. 2, pp. 1008-1016, Jan. 15, 2001.
    • (2001) J. Appl. Phys , vol.89 , Issue.2 , pp. 1008-1016
    • Kamins, T.I.1    Williams, R.S.2    Basile, D.P.3    Hesjedal, T.4    Harris, J.S.5
  • 4
    • 33751122778 scopus 로고
    • Vapor-liquid-solid mechanism of single crystal growth
    • Mar. 1
    • R. S. Wagner and W. C. Ellis, "Vapor-liquid-solid mechanism of single crystal growth," Appl. Phys. Lett., vol. 4, no. 5, pp. 89-90, Mar. 1, 1964.
    • (1964) Appl. Phys. Lett , vol.4 , Issue.5 , pp. 89-90
    • Wagner, R.S.1    Ellis, W.C.2
  • 5
    • 0037122167 scopus 로고    scopus 로고
    • Low-temperature synthesis of single-crystal germanium nanowires by chemical vapor deposition
    • Dec. 16
    • D. W. Wang and H. J. Dai, "Low-temperature synthesis of single-crystal germanium nanowires by chemical vapor deposition," Angew. Chem., Int. Ed., vol. 41, no. 24, pp. 4783-4786, Dec. 16, 2002.
    • (2002) Angew. Chem., Int. Ed , vol.41 , Issue.24 , pp. 4783-4786
    • Wang, D.W.1    Dai, H.J.2
  • 6
    • 1642487736 scopus 로고    scopus 로고
    • Growth and structure of chentically vapor deposited Ge nanowires on Si substrates
    • Mar
    • T. I. Kamins, X. Li, R. S. Williams, and X. Liu, "Growth and structure of chentically vapor deposited Ge nanowires on Si substrates," Nano Lett., vol. 4, no. 3, pp. 503-506, Mar. 2004.
    • (2004) Nano Lett , vol.4 , Issue.3 , pp. 503-506
    • Kamins, T.I.1    Li, X.2    Williams, R.S.3    Liu, X.4
  • 9
    • 29844436610 scopus 로고    scopus 로고
    • Well-ordered ZnO nanowire arrays on GaN substrate fabricated via nanosphere lithography
    • Jan. 18
    • J. F. Hong, B. Fuhrmann, R. Scholz, F. Syrowatka, A. Dadgar, A. Krost, and M. Zacharias, "Well-ordered ZnO nanowire arrays on GaN substrate fabricated via nanosphere lithography," J. Cryst. Growth, vol. 287, no. 1, pp. 34-38, Jan. 18, 2006.
    • (2006) J. Cryst. Growth , vol.287 , Issue.1 , pp. 34-38
    • Hong, J.F.1    Fuhrmann, B.2    Scholz, R.3    Syrowatka, F.4    Dadgar, A.5    Krost, A.6    Zacharias, M.7
  • 10
    • 0030165610 scopus 로고    scopus 로고
    • Self-organized growth of GaAs/InAs heterostructure nanocylinders by organometallic vapor phase epitaxy
    • Jun
    • K. Hiruma, H. Murakoshi, M. Yazawa, and T. Katsuyama, "Self-organized growth of GaAs/InAs heterostructure nanocylinders by organometallic vapor phase epitaxy," J. Cryst. Growth, vol. 163, no. 3, pp. 226-231, Jun. 1996.
    • (1996) J. Cryst. Growth , vol.163 , Issue.3 , pp. 226-231
    • Hiruma, K.1    Murakoshi, H.2    Yazawa, M.3    Katsuyama, T.4
  • 12
    • 34250783172 scopus 로고    scopus 로고
    • Nanowire metal-oxide-semiconductor field effect transistor with doped epitaxial contacts for source and drain
    • Jun. 4
    • G. M. Cohen, M. J. Rooks, J. O. Chu, S. E. Laux, P. M. Solomon, J. A. Ott, R. J. Miller, and W. Haensch, "Nanowire metal-oxide-semiconductor field effect transistor with doped epitaxial contacts for source and drain," Appl. Phys. Lett., vol. 90, no. 23, p. 233 110, Jun. 4, 2007.
    • (2007) Appl. Phys. Lett , vol.90 , Issue.23 , pp. 233-110
    • Cohen, G.M.1    Rooks, M.J.2    Chu, J.O.3    Laux, S.E.4    Solomon, P.M.5    Ott, J.A.6    Miller, R.J.7    Haensch, W.8
  • 13
    • 40749151146 scopus 로고    scopus 로고
    • Vertical enhancement-mode InAs nanowire field-effect transistor with 50-nm wrap gate
    • Mar
    • C. Thelander, L. E. Froberg, C. Rehnstedt, L. Samuelson, and L.-E. Wernersson, "Vertical enhancement-mode InAs nanowire field-effect transistor with 50-nm wrap gate," IEEE Electron Device Lett., vol. 29, no. 3, pp. 206-208, Mar. 2008.
    • (2008) IEEE Electron Device Lett , vol.29 , Issue.3 , pp. 206-208
    • Thelander, C.1    Froberg, L.E.2    Rehnstedt, C.3    Samuelson, L.4    Wernersson, L.-E.5
  • 15
    • 33750464810 scopus 로고    scopus 로고
    • Electroless deposition of An nanocrystals on Si(111) surfaces as catalysts for epitaxial growth of Si nanowires
    • Sep. 15, Oct. 23
    • A. A. Yasseri, S. Sharma, G. Y. Jung, and T. I. Kamins, "Electroless deposition of An nanocrystals on Si(111) surfaces as catalysts for epitaxial growth of Si nanowires," Electrochem. Solid-State Lett. vol. 9, no. 12, pp. C185-C188, Sep. 15, 2006. vol. 9, p. L15, Oct. 23, 2006.
    • (2006) Electrochem. Solid-State Lett , vol.9 , Issue.12
    • Yasseri, A.A.1    Sharma, S.2    Jung, G.Y.3    Kamins, T.I.4
  • 16
    • 21244506483 scopus 로고    scopus 로고
    • Block copolymer-templated chemistry on Si, Ge, InP, and GaAs surfaces
    • Chem. Soc, Jun. 29
    • M. Aizawa and J. M. Buriak, "Block copolymer-templated chemistry on Si, Ge, InP, and GaAs surfaces," J. Amer. Chem. Soc., vol. 127, no. 25, pp. 8932-8933, Jun. 29, 2005.
    • (2005) J. Amer , vol.127 , Issue.25 , pp. 8932-8933
    • Aizawa, M.1    Buriak, J.M.2
  • 17
    • 16244371061 scopus 로고    scopus 로고
    • Synthesis of thin silicon nanowires using gold-catalyzed chemical vapor deposition
    • Mar
    • S. Sharma, T. I. Kamins, and R. S. Williams, "Synthesis of thin silicon nanowires using gold-catalyzed chemical vapor deposition," Appl. Phys. A, Solids Surf., vol. 80, no. 6, pp. 1225-1229, Mar. 2005.
    • (2005) Appl. Phys. A, Solids Surf , vol.80 , Issue.6 , pp. 1225-1229
    • Sharma, S.1    Kamins, T.I.2    Williams, R.S.3
  • 18
    • 16244388903 scopus 로고    scopus 로고
    • Controlled growth of Si nanowire arrays for device integration
    • Mar
    • A. I. Hochbaum, R. Fan, R. He, and P. Yang, "Controlled growth of Si nanowire arrays for device integration," Nano Lett., vol. 5, no. 3, pp. 457-460, Mar. 2005.
    • (2005) Nano Lett , vol.5 , Issue.3 , pp. 457-460
    • Hochbaum, A.I.1    Fan, R.2    He, R.3    Yang, P.4
  • 19
    • 19944379818 scopus 로고    scopus 로고
    • Diameter-dependent growth direction of epitaxial silicon nanowires
    • May
    • V. Schmidt, S. Senz, and U. Gösele, "Diameter-dependent growth direction of epitaxial silicon nanowires," Nano Lett., vol. 5, no. 5, pp. 931-935, May 2005.
    • (2005) Nano Lett , vol.5 , Issue.5 , pp. 931-935
    • Schmidt, V.1    Senz, S.2    Gösele, U.3
  • 20
    • 2942666154 scopus 로고    scopus 로고
    • Diameter control of Ti-catalyzed silicon nanowires
    • Jul. 1
    • S. Sharma, T. I. Kamms, and R. S. Williams, "Diameter control of Ti-catalyzed silicon nanowires," J. Cryst. Growth, vol. 267, no. 3/4, pp. 613-618, Jul. 1, 2004.
    • (2004) J. Cryst. Growth , vol.267 , Issue.3-4 , pp. 613-618
    • Sharma, S.1    Kamms, T.I.2    Williams, R.S.3
  • 21
    • 24344433386 scopus 로고    scopus 로고
    • In situ p-n junctions and gated devices in titanium-silicide nucleated Si nanowires
    • Aug
    • Q. Tang, T. I. Kamins, X. Liu, D. E. Grupp, and J. S. Harris, "In situ p-n junctions and gated devices in titanium-silicide nucleated Si nanowires," Electrochem. Solid-State Lett., vol. 8, no. 8, pp. G204-G208, Aug. 2005.
    • (2005) Electrochem. Solid-State Lett , vol.8 , Issue.8
    • Tang, Q.1    Kamins, T.I.2    Liu, X.3    Grupp, D.E.4    Harris, J.S.5
  • 22
    • 4143108889 scopus 로고    scopus 로고
    • Single crystal nanowire vertical surround-gate field-effect transistor
    • Jul
    • H. T. Ng, J. Han, T. Yamada, P. Nguyen, Y. P. Chen, and M. Meyyappan, "Single crystal nanowire vertical surround-gate field-effect transistor," Nano Lett., vol. 4, no. 7, pp. 1247-1252, Jul. 2004.
    • (2004) Nano Lett , vol.4 , Issue.7 , pp. 1247-1252
    • Ng, H.T.1    Han, J.2    Yamada, T.3    Nguyen, P.4    Chen, Y.P.5    Meyyappan, M.6
  • 23
    • 42149172561 scopus 로고    scopus 로고
    • Mechanical resonance of clamped silicon nanowires measured by optical interferometry
    • Apr. 7
    • M. Belov, N. J. Quitoriano, S. Sharma, W. K. Hiebert, T. I. Kamins, and S. Evoy, "Mechanical resonance of clamped silicon nanowires measured by optical interferometry," J. Appl. Phys., vol. 103, no. 7, p. 074 304, Apr. 7, 2008.
    • (2008) J. Appl. Phys , vol.103 , Issue.7 , pp. 074-304
    • Belov, M.1    Quitoriano, N.J.2    Sharma, S.3    Hiebert, W.K.4    Kamins, T.I.5    Evoy, S.6
  • 24
    • 0001059915 scopus 로고
    • On etching very narrow grooves in silicon
    • Feb. 15
    • D. L. Kendall, "On etching very narrow grooves in silicon," Appl. Phys. Lett., vol. 26, no. 4, pp. 195-198, Feb. 15, 1975.
    • (1975) Appl. Phys. Lett , vol.26 , Issue.4 , pp. 195-198
    • Kendall, D.L.1
  • 25
    • 34548407336 scopus 로고    scopus 로고
    • Using p-n junction depletion regions to position epitaxial nanowires
    • Aug. 28
    • N. J. Quitoriano and T. I. Kamins, "Using p-n junction depletion regions to position epitaxial nanowires," J. Appl. Phys., vol. 102, no. 4, p. 044 311, Aug. 28, 2007.
    • (2007) J. Appl. Phys , vol.102 , Issue.4 , pp. 044-311
    • Quitoriano, N.J.1    Kamins, T.I.2
  • 26
    • 33846876588 scopus 로고    scopus 로고
    • Ultra-sensitive NEMS-based cantilevers for sensing, scanned probe and very high-frequency applications
    • Feb
    • M. Li, H. X. Tang, and L. Roukes, "Ultra-sensitive NEMS-based cantilevers for sensing, scanned probe and very high-frequency applications," Nat. Nanotechnol., vol. 2, no. 2, pp. 114-120, Feb. 2007.
    • (2007) Nat. Nanotechnol , vol.2 , Issue.2 , pp. 114-120
    • Li, M.1    Tang, H.X.2    Roukes, L.3
  • 27
    • 34547321166 scopus 로고    scopus 로고
    • High-frequency nanofluidics: An experimental study using nanomechanical resonators
    • Jun. 22
    • D. M. Karabacak, V. Yakhot, and K. L. Ekinci, "High-frequency nanofluidics: An experimental study using nanomechanical resonators," Phys. Rev. Lett., vol. 98, no. 25, p. 254 505, Jun. 22, 2007.
    • (2007) Phys. Rev. Lett , vol.98 , Issue.25 , pp. 254-505
    • Karabacak, D.M.1    Yakhot, V.2    Ekinci, K.L.3
  • 28
    • 2642566816 scopus 로고    scopus 로고
    • Ultrahigh-density silicon nanobridges formed between two vertical silicon surfaces
    • May
    • M. S. Islam, S. Sharma, T. I. Kamins, and R. S. Williams, "Ultrahigh-density silicon nanobridges formed between two vertical silicon surfaces," Nanotechnology, vol. 15, no. 5, pp. 1-5-1-8, May 2004.
    • (2004) Nanotechnology , vol.15 , Issue.5
    • Islam, M.S.1    Sharma, S.2    Kamins, T.I.3    Williams, R.S.4
  • 29
    • 20344378254 scopus 로고    scopus 로고
    • Structural characteristics and connection mechanism of gold-catalyzed bridging silicon nanowires
    • Jul. 1
    • S. Sharma, T. I. Kamins, M. S. Islam, R. S. Williams, and A. F. Marshall, "Structural characteristics and connection mechanism of gold-catalyzed bridging silicon nanowires," J. Cryst. Growth, vol. 280, no. 3/4, pp. 562-568, Jul. 1, 2005.
    • (2005) J. Cryst. Growth , vol.280 , Issue.3-4 , pp. 562-568
    • Sharma, S.1    Kamins, T.I.2    Islam, M.S.3    Williams, R.S.4    Marshall, A.F.5
  • 30
    • 33744549048 scopus 로고    scopus 로고
    • Metal-catalyzed, bridging nanowires as vapour sensors and concept for their use in a sensor system
    • Jun. 14
    • T. I. Kamins, S. Sharma, A. A. Yasseri, Z. Li, and J. Straznicky, "Metal-catalyzed, bridging nanowires as vapour sensors and concept for their use in a sensor system," Nanotechnology, vol. 17, pp. S291-S297, Jun. 14, 2006.
    • (2006) Nanotechnology , vol.17
    • Kamins, T.I.1    Sharma, S.2    Yasseri, A.A.3    Li, Z.4    Straznicky, J.5
  • 31
    • 31044449712 scopus 로고    scopus 로고
    • Surface charge density of unpassivated and passivated, metal-catalyzed silicon nanowires
    • Mar
    • K.-I. Seo, S. Sharma, A. Yasseri, D. Stewart, and T. I. Kamins, "Surface charge density of unpassivated and passivated, metal-catalyzed silicon nanowires," Electrochem. Solid-State Lett., vol. 9, no. 3, pp. G69-G72, Mar. 2006.
    • (2006) Electrochem. Solid-State Lett , vol.9 , Issue.3
    • Seo, K.-I.1    Sharma, S.2    Yasseri, A.3    Stewart, D.4    Kamins, T.I.5
  • 32
    • 33749258714 scopus 로고    scopus 로고
    • InP nanobridges epitaxially formed between two vertical Si surfaces by metal-catalyzed chemical vapor deposition
    • Sep. 25
    • S. S. Yi, G. Girolami, J. Amano, M. S. Islam, S. Sharma, I. Kimukin, and T. I. Kamins, "InP nanobridges epitaxially formed between two vertical Si surfaces by metal-catalyzed chemical vapor deposition," Appl. Phys. Lett., vol. 89, no. 13, p. 133 121, Sep. 25, 2006.
    • (2006) Appl. Phys. Lett , vol.89 , Issue.13 , pp. 133-121
    • Yi, S.S.1    Girolami, G.2    Amano, J.3    Islam, M.S.4    Sharma, S.5    Kimukin, I.6    Kamins, T.I.7
  • 33
    • 33846615095 scopus 로고    scopus 로고
    • Critical diameter for III-V nanowires grown on lattice-mismatched substrates
    • Jan. 25
    • L. C. Chuang, M. Moewe, C. Chase, N. P. Kobayashi, C. Chang-Hasnain, and S. Crankshaw, "Critical diameter for III-V nanowires grown on lattice-mismatched substrates," Appl. Phys. Lett., vol. 90, no. 4, p. 043 115, Jan. 25, 2007.
    • (2007) Appl. Phys. Lett , vol.90 , Issue.4 , pp. 043-115
    • Chuang, L.C.1    Moewe, M.2    Chase, C.3    Kobayashi, N.P.4    Chang-Hasnain, C.5    Crankshaw, S.6
  • 35
    • 33750178280 scopus 로고    scopus 로고
    • Germanium nanowires: From synthesis, surface chemistry, and assembly to devices
    • Nov
    • D. Wang and H. Dai, "Germanium nanowires: From synthesis, surface chemistry, and assembly to devices," Appl. Phys. A, Solids Surf., vol. 85, no. 3, pp. 217-225, Nov. 2006.
    • (2006) Appl. Phys. A, Solids Surf , vol.85 , Issue.3 , pp. 217-225
    • Wang, D.1    Dai, H.2
  • 36
    • 0020796133 scopus 로고
    • Effects of grain boundaries on the channel conductance of SOI MOSFETs
    • Aug
    • J. G. Fossum and A. Ortiz-Conde, "Effects of grain boundaries on the channel conductance of SOI MOSFETs," IEEE Trans. Electron Devices vol. ED-30, no. 8, pp. 933-940, Aug. 1983.
    • (1983) IEEE Trans. Electron Devices , vol.ED-30 , Issue.8 , pp. 933-940
    • Fossum, J.G.1    Ortiz-Conde, A.2
  • 37
    • 0034824859 scopus 로고    scopus 로고
    • Directed assembly of one-dimensional nanostructures into functional networks
    • Jan. 26
    • Y. Huang, X. Duan, Q. Wei, and C. M. Lieber, "Directed assembly of one-dimensional nanostructures into functional networks," Science vol. 291, no. 5504, pp. 630-633, Jan. 26, 2001.
    • (2001) Science , vol.291 , Issue.5504 , pp. 630-633
    • Huang, Y.1    Duan, X.2    Wei, Q.3    Lieber, C.M.4
  • 38
    • 5144234021 scopus 로고    scopus 로고
    • Large-scale hierarchical organization of nanowires for functional nanosystems
    • Jul
    • D. Whang, S. Jin, and C. M. Lieber, "Large-scale hierarchical organization of nanowires for functional nanosystems," Jpn. J. Appl. Phys., vol. 43, no. 7B, pp. 4465-4470, Jul. 2004.
    • (2004) Jpn. J. Appl. Phys , vol.43 , Issue.7 B , pp. 4465-4470
    • Whang, D.1    Jin, S.2    Lieber, C.M.3
  • 39
    • 33746907808 scopus 로고    scopus 로고
    • Y. Liu, J.-H. Chung, W. K. Liu, and R. S. Ruoff, Dielectrophoretic assembly of nanowires, J. Phys. Chem. B, 110, no. 29, pp. 14 098-14 106, Jul. 27, 2006.
    • Y. Liu, J.-H. Chung, W. K. Liu, and R. S. Ruoff, "Dielectrophoretic assembly of nanowires," J. Phys. Chem. B, vol. 110, no. 29, pp. 14 098-14 106, Jul. 27, 2006.
  • 40
    • 33646407304 scopus 로고    scopus 로고
    • Synchronous electrorotation of nanowires in fluid
    • Mar. 21
    • B. Edwards, T. S. Mayer, and R. B. Bluladvala, "Synchronous electrorotation of nanowires in fluid," Nano Lett., vol. 6, no. 4, pp. 626-632, Mar. 21, 2006.
    • (2006) Nano Lett , vol.6 , Issue.4 , pp. 626-632
    • Edwards, B.1    Mayer, T.S.2    Bluladvala, R.B.3
  • 41
    • 77953157398 scopus 로고    scopus 로고
    • Surfactant mediated assembly of gold nanowires on surfaces
    • Mar.-Dec
    • J. J. Booth, K. Crtichley, and S. D. Evans, "Surfactant mediated assembly of gold nanowires on surfaces," J. Exp. Nanosci., vol. 1, no. 2, pp. 125-142, Mar.-Dec. 2006.
    • (2006) J. Exp. Nanosci , vol.1 , Issue.2 , pp. 125-142
    • Booth, J.J.1    Crtichley, K.2    Evans, S.D.3
  • 42
    • 33745613849 scopus 로고    scopus 로고
    • Theory of nanocomposite network transistors for macroelectronics applications
    • Jun
    • M. A. Alain, N. Pimparkar, S. Kumar, and J. Murthy, "Theory of nanocomposite network transistors for macroelectronics applications," Mater. Res. Soc. Bull., vol. 31, no. 6, pp. 466-470, Jun. 2006.
    • (2006) Mater. Res. Soc. Bull , vol.31 , Issue.6 , pp. 466-470
    • Alain, M.A.1    Pimparkar, N.2    Kumar, S.3    Murthy, J.4
  • 43
    • 50549104030 scopus 로고    scopus 로고
    • Epitaxial growth of silicon nanowires using an aluminium catalyst
    • Dec
    • Y. Wang, V. Schmidt, S. Senz, and U. Gösele, "Epitaxial growth of silicon nanowires using an aluminium catalyst," Nat. Nanotechnol. vol. 1, no. 3, pp. 186-189, Dec. 2006.
    • (2006) Nat. Nanotechnol , vol.1 , Issue.3 , pp. 186-189
    • Wang, Y.1    Schmidt, V.2    Senz, S.3    Gösele, U.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.