-
1
-
-
0037912948
-
Growth of silicon nanowires via gold/silane vapor-liquid-solid reaction
-
May/Jun
-
J. Westwater, D. P. Gosain, S. Tomiya, S. Usui, and H. Ruda, "Growth of silicon nanowires via gold/silane vapor-liquid-solid reaction," J. Vac. Sci. Technol. B, Microelectron. Process. Phenom., vol. 15, no. 3, pp. 554-557, May/Jun. 1997.
-
(1997)
J. Vac. Sci. Technol. B, Microelectron. Process. Phenom
, vol.15
, Issue.3
, pp. 554-557
-
-
Westwater, J.1
Gosain, D.P.2
Tomiya, S.3
Usui, S.4
Ruda, H.5
-
2
-
-
0032498174
-
A laser ablation method for the synthesis of crystalline semiconductor nanowires
-
Jan. 9
-
A. M. Morales and C. M. Lieber, "A laser ablation method for the synthesis of crystalline semiconductor nanowires," Science, vol. 279, no. 5348, pp. 208-211, Jan. 9, 1998.
-
(1998)
Science
, vol.279
, Issue.5348
, pp. 208-211
-
-
Morales, A.M.1
Lieber, C.M.2
-
3
-
-
0000434281
-
Ti-catalyzed Si nanowires by chentical vapor deposition: Microscopy and growth mechanisms
-
Jan. 15
-
T. I. Kamins, R. S. Williams, D. P. Basile, T. Hesjedal, and J. S. Harris, "Ti-catalyzed Si nanowires by chentical vapor deposition: Microscopy and growth mechanisms," J. Appl. Phys., vol. 89, no. 2, pp. 1008-1016, Jan. 15, 2001.
-
(2001)
J. Appl. Phys
, vol.89
, Issue.2
, pp. 1008-1016
-
-
Kamins, T.I.1
Williams, R.S.2
Basile, D.P.3
Hesjedal, T.4
Harris, J.S.5
-
4
-
-
33751122778
-
Vapor-liquid-solid mechanism of single crystal growth
-
Mar. 1
-
R. S. Wagner and W. C. Ellis, "Vapor-liquid-solid mechanism of single crystal growth," Appl. Phys. Lett., vol. 4, no. 5, pp. 89-90, Mar. 1, 1964.
-
(1964)
Appl. Phys. Lett
, vol.4
, Issue.5
, pp. 89-90
-
-
Wagner, R.S.1
Ellis, W.C.2
-
5
-
-
0037122167
-
Low-temperature synthesis of single-crystal germanium nanowires by chemical vapor deposition
-
Dec. 16
-
D. W. Wang and H. J. Dai, "Low-temperature synthesis of single-crystal germanium nanowires by chemical vapor deposition," Angew. Chem., Int. Ed., vol. 41, no. 24, pp. 4783-4786, Dec. 16, 2002.
-
(2002)
Angew. Chem., Int. Ed
, vol.41
, Issue.24
, pp. 4783-4786
-
-
Wang, D.W.1
Dai, H.J.2
-
6
-
-
1642487736
-
Growth and structure of chentically vapor deposited Ge nanowires on Si substrates
-
Mar
-
T. I. Kamins, X. Li, R. S. Williams, and X. Liu, "Growth and structure of chentically vapor deposited Ge nanowires on Si substrates," Nano Lett., vol. 4, no. 3, pp. 503-506, Mar. 2004.
-
(2004)
Nano Lett
, vol.4
, Issue.3
, pp. 503-506
-
-
Kamins, T.I.1
Li, X.2
Williams, R.S.3
Liu, X.4
-
7
-
-
0037011472
-
Nanowire resonant tunneling diodes
-
Dec. 2
-
M. T. Bjork, B. J. Ohlsson, C. Thelander, A. I. Persson, K. Deppert, L. R. Wallenberg, and L. Samuelson, "Nanowire resonant tunneling diodes," Appl. Phys. Lett., vol. 81, no. 23, pp. 4458-4460, Dec. 2, 2002.
-
(2002)
Appl. Phys. Lett
, vol.81
, Issue.23
, pp. 4458-4460
-
-
Bjork, M.T.1
Ohlsson, B.J.2
Thelander, C.3
Persson, A.I.4
Deppert, K.5
Wallenberg, L.R.6
Samuelson, L.7
-
8
-
-
33846362580
-
Position-controlled interconnected InAs nanowire networks
-
Aug
-
K. A. Dick, K. Deppert, L. S. Karlsson, W. Seifert, L. R. Wallenberg, and L. Samuelson, "Position-controlled interconnected InAs nanowire networks," Nano Lett., vol. 6, no. 12, pp. 2842-2847, Aug. 2006.
-
(2006)
Nano Lett
, vol.6
, Issue.12
, pp. 2842-2847
-
-
Dick, K.A.1
Deppert, K.2
Karlsson, L.S.3
Seifert, W.4
Wallenberg, L.R.5
Samuelson, L.6
-
9
-
-
29844436610
-
Well-ordered ZnO nanowire arrays on GaN substrate fabricated via nanosphere lithography
-
Jan. 18
-
J. F. Hong, B. Fuhrmann, R. Scholz, F. Syrowatka, A. Dadgar, A. Krost, and M. Zacharias, "Well-ordered ZnO nanowire arrays on GaN substrate fabricated via nanosphere lithography," J. Cryst. Growth, vol. 287, no. 1, pp. 34-38, Jan. 18, 2006.
-
(2006)
J. Cryst. Growth
, vol.287
, Issue.1
, pp. 34-38
-
-
Hong, J.F.1
Fuhrmann, B.2
Scholz, R.3
Syrowatka, F.4
Dadgar, A.5
Krost, A.6
Zacharias, M.7
-
10
-
-
0030165610
-
Self-organized growth of GaAs/InAs heterostructure nanocylinders by organometallic vapor phase epitaxy
-
Jun
-
K. Hiruma, H. Murakoshi, M. Yazawa, and T. Katsuyama, "Self-organized growth of GaAs/InAs heterostructure nanocylinders by organometallic vapor phase epitaxy," J. Cryst. Growth, vol. 163, no. 3, pp. 226-231, Jun. 1996.
-
(1996)
J. Cryst. Growth
, vol.163
, Issue.3
, pp. 226-231
-
-
Hiruma, K.1
Murakoshi, H.2
Yazawa, M.3
Katsuyama, T.4
-
11
-
-
56649089047
-
Heterostructures in one-dimensional nanowires
-
presented at the, Malmo, Sweden, Jun. 24-28
-
M. T. Bjork, B. J. Ohlsson, A. I. Persoon, L. R. Wallenberg, and L. Samuelson, "Heterostructures in one-dimensional nanowires," presented at the 7th Int. Conf. Nanometer-Scale Science and Technology and 21st Eur. Conf. Surface Science, Malmo, Sweden, Jun. 24-28, 2002.
-
(2002)
7th Int. Conf. Nanometer-Scale Science and Technology and 21st Eur. Conf. Surface Science
-
-
Bjork, M.T.1
Ohlsson, B.J.2
Persoon, A.I.3
Wallenberg, L.R.4
Samuelson, L.5
-
12
-
-
34250783172
-
Nanowire metal-oxide-semiconductor field effect transistor with doped epitaxial contacts for source and drain
-
Jun. 4
-
G. M. Cohen, M. J. Rooks, J. O. Chu, S. E. Laux, P. M. Solomon, J. A. Ott, R. J. Miller, and W. Haensch, "Nanowire metal-oxide-semiconductor field effect transistor with doped epitaxial contacts for source and drain," Appl. Phys. Lett., vol. 90, no. 23, p. 233 110, Jun. 4, 2007.
-
(2007)
Appl. Phys. Lett
, vol.90
, Issue.23
, pp. 233-110
-
-
Cohen, G.M.1
Rooks, M.J.2
Chu, J.O.3
Laux, S.E.4
Solomon, P.M.5
Ott, J.A.6
Miller, R.J.7
Haensch, W.8
-
13
-
-
40749151146
-
Vertical enhancement-mode InAs nanowire field-effect transistor with 50-nm wrap gate
-
Mar
-
C. Thelander, L. E. Froberg, C. Rehnstedt, L. Samuelson, and L.-E. Wernersson, "Vertical enhancement-mode InAs nanowire field-effect transistor with 50-nm wrap gate," IEEE Electron Device Lett., vol. 29, no. 3, pp. 206-208, Mar. 2008.
-
(2008)
IEEE Electron Device Lett
, vol.29
, Issue.3
, pp. 206-208
-
-
Thelander, C.1
Froberg, L.E.2
Rehnstedt, C.3
Samuelson, L.4
Wernersson, L.-E.5
-
14
-
-
33748634908
-
Nanowire-based one-dimensional electronics
-
Oct
-
C. Thelander, P. Agarwal, S. Brongersma, J. Eymery, L. F. Feiner, A. Forchel, M. Scheffler, W. Riess, B. J. Ohlsson, U. Gösele, and L. Samuelson, "Nanowire-based one-dimensional electronics," Mater. Today, vol. 9, no. 10, pp. 28-35, Oct. 2006.
-
(2006)
Mater. Today
, vol.9
, Issue.10
, pp. 28-35
-
-
Thelander, C.1
Agarwal, P.2
Brongersma, S.3
Eymery, J.4
Feiner, L.F.5
Forchel, A.6
Scheffler, M.7
Riess, W.8
Ohlsson, B.J.9
Gösele, U.10
Samuelson, L.11
-
15
-
-
33750464810
-
Electroless deposition of An nanocrystals on Si(111) surfaces as catalysts for epitaxial growth of Si nanowires
-
Sep. 15, Oct. 23
-
A. A. Yasseri, S. Sharma, G. Y. Jung, and T. I. Kamins, "Electroless deposition of An nanocrystals on Si(111) surfaces as catalysts for epitaxial growth of Si nanowires," Electrochem. Solid-State Lett. vol. 9, no. 12, pp. C185-C188, Sep. 15, 2006. vol. 9, p. L15, Oct. 23, 2006.
-
(2006)
Electrochem. Solid-State Lett
, vol.9
, Issue.12
-
-
Yasseri, A.A.1
Sharma, S.2
Jung, G.Y.3
Kamins, T.I.4
-
16
-
-
21244506483
-
Block copolymer-templated chemistry on Si, Ge, InP, and GaAs surfaces
-
Chem. Soc, Jun. 29
-
M. Aizawa and J. M. Buriak, "Block copolymer-templated chemistry on Si, Ge, InP, and GaAs surfaces," J. Amer. Chem. Soc., vol. 127, no. 25, pp. 8932-8933, Jun. 29, 2005.
-
(2005)
J. Amer
, vol.127
, Issue.25
, pp. 8932-8933
-
-
Aizawa, M.1
Buriak, J.M.2
-
17
-
-
16244371061
-
Synthesis of thin silicon nanowires using gold-catalyzed chemical vapor deposition
-
Mar
-
S. Sharma, T. I. Kamins, and R. S. Williams, "Synthesis of thin silicon nanowires using gold-catalyzed chemical vapor deposition," Appl. Phys. A, Solids Surf., vol. 80, no. 6, pp. 1225-1229, Mar. 2005.
-
(2005)
Appl. Phys. A, Solids Surf
, vol.80
, Issue.6
, pp. 1225-1229
-
-
Sharma, S.1
Kamins, T.I.2
Williams, R.S.3
-
18
-
-
16244388903
-
Controlled growth of Si nanowire arrays for device integration
-
Mar
-
A. I. Hochbaum, R. Fan, R. He, and P. Yang, "Controlled growth of Si nanowire arrays for device integration," Nano Lett., vol. 5, no. 3, pp. 457-460, Mar. 2005.
-
(2005)
Nano Lett
, vol.5
, Issue.3
, pp. 457-460
-
-
Hochbaum, A.I.1
Fan, R.2
He, R.3
Yang, P.4
-
19
-
-
19944379818
-
Diameter-dependent growth direction of epitaxial silicon nanowires
-
May
-
V. Schmidt, S. Senz, and U. Gösele, "Diameter-dependent growth direction of epitaxial silicon nanowires," Nano Lett., vol. 5, no. 5, pp. 931-935, May 2005.
-
(2005)
Nano Lett
, vol.5
, Issue.5
, pp. 931-935
-
-
Schmidt, V.1
Senz, S.2
Gösele, U.3
-
20
-
-
2942666154
-
Diameter control of Ti-catalyzed silicon nanowires
-
Jul. 1
-
S. Sharma, T. I. Kamms, and R. S. Williams, "Diameter control of Ti-catalyzed silicon nanowires," J. Cryst. Growth, vol. 267, no. 3/4, pp. 613-618, Jul. 1, 2004.
-
(2004)
J. Cryst. Growth
, vol.267
, Issue.3-4
, pp. 613-618
-
-
Sharma, S.1
Kamms, T.I.2
Williams, R.S.3
-
21
-
-
24344433386
-
In situ p-n junctions and gated devices in titanium-silicide nucleated Si nanowires
-
Aug
-
Q. Tang, T. I. Kamins, X. Liu, D. E. Grupp, and J. S. Harris, "In situ p-n junctions and gated devices in titanium-silicide nucleated Si nanowires," Electrochem. Solid-State Lett., vol. 8, no. 8, pp. G204-G208, Aug. 2005.
-
(2005)
Electrochem. Solid-State Lett
, vol.8
, Issue.8
-
-
Tang, Q.1
Kamins, T.I.2
Liu, X.3
Grupp, D.E.4
Harris, J.S.5
-
22
-
-
4143108889
-
Single crystal nanowire vertical surround-gate field-effect transistor
-
Jul
-
H. T. Ng, J. Han, T. Yamada, P. Nguyen, Y. P. Chen, and M. Meyyappan, "Single crystal nanowire vertical surround-gate field-effect transistor," Nano Lett., vol. 4, no. 7, pp. 1247-1252, Jul. 2004.
-
(2004)
Nano Lett
, vol.4
, Issue.7
, pp. 1247-1252
-
-
Ng, H.T.1
Han, J.2
Yamada, T.3
Nguyen, P.4
Chen, Y.P.5
Meyyappan, M.6
-
23
-
-
42149172561
-
Mechanical resonance of clamped silicon nanowires measured by optical interferometry
-
Apr. 7
-
M. Belov, N. J. Quitoriano, S. Sharma, W. K. Hiebert, T. I. Kamins, and S. Evoy, "Mechanical resonance of clamped silicon nanowires measured by optical interferometry," J. Appl. Phys., vol. 103, no. 7, p. 074 304, Apr. 7, 2008.
-
(2008)
J. Appl. Phys
, vol.103
, Issue.7
, pp. 074-304
-
-
Belov, M.1
Quitoriano, N.J.2
Sharma, S.3
Hiebert, W.K.4
Kamins, T.I.5
Evoy, S.6
-
24
-
-
0001059915
-
On etching very narrow grooves in silicon
-
Feb. 15
-
D. L. Kendall, "On etching very narrow grooves in silicon," Appl. Phys. Lett., vol. 26, no. 4, pp. 195-198, Feb. 15, 1975.
-
(1975)
Appl. Phys. Lett
, vol.26
, Issue.4
, pp. 195-198
-
-
Kendall, D.L.1
-
25
-
-
34548407336
-
Using p-n junction depletion regions to position epitaxial nanowires
-
Aug. 28
-
N. J. Quitoriano and T. I. Kamins, "Using p-n junction depletion regions to position epitaxial nanowires," J. Appl. Phys., vol. 102, no. 4, p. 044 311, Aug. 28, 2007.
-
(2007)
J. Appl. Phys
, vol.102
, Issue.4
, pp. 044-311
-
-
Quitoriano, N.J.1
Kamins, T.I.2
-
26
-
-
33846876588
-
Ultra-sensitive NEMS-based cantilevers for sensing, scanned probe and very high-frequency applications
-
Feb
-
M. Li, H. X. Tang, and L. Roukes, "Ultra-sensitive NEMS-based cantilevers for sensing, scanned probe and very high-frequency applications," Nat. Nanotechnol., vol. 2, no. 2, pp. 114-120, Feb. 2007.
-
(2007)
Nat. Nanotechnol
, vol.2
, Issue.2
, pp. 114-120
-
-
Li, M.1
Tang, H.X.2
Roukes, L.3
-
27
-
-
34547321166
-
High-frequency nanofluidics: An experimental study using nanomechanical resonators
-
Jun. 22
-
D. M. Karabacak, V. Yakhot, and K. L. Ekinci, "High-frequency nanofluidics: An experimental study using nanomechanical resonators," Phys. Rev. Lett., vol. 98, no. 25, p. 254 505, Jun. 22, 2007.
-
(2007)
Phys. Rev. Lett
, vol.98
, Issue.25
, pp. 254-505
-
-
Karabacak, D.M.1
Yakhot, V.2
Ekinci, K.L.3
-
28
-
-
2642566816
-
Ultrahigh-density silicon nanobridges formed between two vertical silicon surfaces
-
May
-
M. S. Islam, S. Sharma, T. I. Kamins, and R. S. Williams, "Ultrahigh-density silicon nanobridges formed between two vertical silicon surfaces," Nanotechnology, vol. 15, no. 5, pp. 1-5-1-8, May 2004.
-
(2004)
Nanotechnology
, vol.15
, Issue.5
-
-
Islam, M.S.1
Sharma, S.2
Kamins, T.I.3
Williams, R.S.4
-
29
-
-
20344378254
-
Structural characteristics and connection mechanism of gold-catalyzed bridging silicon nanowires
-
Jul. 1
-
S. Sharma, T. I. Kamins, M. S. Islam, R. S. Williams, and A. F. Marshall, "Structural characteristics and connection mechanism of gold-catalyzed bridging silicon nanowires," J. Cryst. Growth, vol. 280, no. 3/4, pp. 562-568, Jul. 1, 2005.
-
(2005)
J. Cryst. Growth
, vol.280
, Issue.3-4
, pp. 562-568
-
-
Sharma, S.1
Kamins, T.I.2
Islam, M.S.3
Williams, R.S.4
Marshall, A.F.5
-
30
-
-
33744549048
-
Metal-catalyzed, bridging nanowires as vapour sensors and concept for their use in a sensor system
-
Jun. 14
-
T. I. Kamins, S. Sharma, A. A. Yasseri, Z. Li, and J. Straznicky, "Metal-catalyzed, bridging nanowires as vapour sensors and concept for their use in a sensor system," Nanotechnology, vol. 17, pp. S291-S297, Jun. 14, 2006.
-
(2006)
Nanotechnology
, vol.17
-
-
Kamins, T.I.1
Sharma, S.2
Yasseri, A.A.3
Li, Z.4
Straznicky, J.5
-
31
-
-
31044449712
-
Surface charge density of unpassivated and passivated, metal-catalyzed silicon nanowires
-
Mar
-
K.-I. Seo, S. Sharma, A. Yasseri, D. Stewart, and T. I. Kamins, "Surface charge density of unpassivated and passivated, metal-catalyzed silicon nanowires," Electrochem. Solid-State Lett., vol. 9, no. 3, pp. G69-G72, Mar. 2006.
-
(2006)
Electrochem. Solid-State Lett
, vol.9
, Issue.3
-
-
Seo, K.-I.1
Sharma, S.2
Yasseri, A.3
Stewart, D.4
Kamins, T.I.5
-
32
-
-
33749258714
-
InP nanobridges epitaxially formed between two vertical Si surfaces by metal-catalyzed chemical vapor deposition
-
Sep. 25
-
S. S. Yi, G. Girolami, J. Amano, M. S. Islam, S. Sharma, I. Kimukin, and T. I. Kamins, "InP nanobridges epitaxially formed between two vertical Si surfaces by metal-catalyzed chemical vapor deposition," Appl. Phys. Lett., vol. 89, no. 13, p. 133 121, Sep. 25, 2006.
-
(2006)
Appl. Phys. Lett
, vol.89
, Issue.13
, pp. 133-121
-
-
Yi, S.S.1
Girolami, G.2
Amano, J.3
Islam, M.S.4
Sharma, S.5
Kimukin, I.6
Kamins, T.I.7
-
33
-
-
33846615095
-
Critical diameter for III-V nanowires grown on lattice-mismatched substrates
-
Jan. 25
-
L. C. Chuang, M. Moewe, C. Chase, N. P. Kobayashi, C. Chang-Hasnain, and S. Crankshaw, "Critical diameter for III-V nanowires grown on lattice-mismatched substrates," Appl. Phys. Lett., vol. 90, no. 4, p. 043 115, Jan. 25, 2007.
-
(2007)
Appl. Phys. Lett
, vol.90
, Issue.4
, pp. 043-115
-
-
Chuang, L.C.1
Moewe, M.2
Chase, C.3
Kobayashi, N.P.4
Chang-Hasnain, C.5
Crankshaw, S.6
-
34
-
-
34547380776
-
Epitaxial growth of ZnO nanorods on Si substrate
-
Jun
-
B. Tang, H. Deng, Q. Zhang, Z.-W. Shui, J.-Y. Cheng, and C.-L. Zhao, "Epitaxial growth of ZnO nanorods on Si substrate," J. Synth. Cryst., vol. 36, no. 3, pp. 540-544, Jun. 2007.
-
(2007)
J. Synth. Cryst
, vol.36
, Issue.3
, pp. 540-544
-
-
Tang, B.1
Deng, H.2
Zhang, Q.3
Shui, Z.-W.4
Cheng, J.-Y.5
Zhao, C.-L.6
-
35
-
-
33750178280
-
Germanium nanowires: From synthesis, surface chemistry, and assembly to devices
-
Nov
-
D. Wang and H. Dai, "Germanium nanowires: From synthesis, surface chemistry, and assembly to devices," Appl. Phys. A, Solids Surf., vol. 85, no. 3, pp. 217-225, Nov. 2006.
-
(2006)
Appl. Phys. A, Solids Surf
, vol.85
, Issue.3
, pp. 217-225
-
-
Wang, D.1
Dai, H.2
-
36
-
-
0020796133
-
Effects of grain boundaries on the channel conductance of SOI MOSFETs
-
Aug
-
J. G. Fossum and A. Ortiz-Conde, "Effects of grain boundaries on the channel conductance of SOI MOSFETs," IEEE Trans. Electron Devices vol. ED-30, no. 8, pp. 933-940, Aug. 1983.
-
(1983)
IEEE Trans. Electron Devices
, vol.ED-30
, Issue.8
, pp. 933-940
-
-
Fossum, J.G.1
Ortiz-Conde, A.2
-
37
-
-
0034824859
-
Directed assembly of one-dimensional nanostructures into functional networks
-
Jan. 26
-
Y. Huang, X. Duan, Q. Wei, and C. M. Lieber, "Directed assembly of one-dimensional nanostructures into functional networks," Science vol. 291, no. 5504, pp. 630-633, Jan. 26, 2001.
-
(2001)
Science
, vol.291
, Issue.5504
, pp. 630-633
-
-
Huang, Y.1
Duan, X.2
Wei, Q.3
Lieber, C.M.4
-
38
-
-
5144234021
-
Large-scale hierarchical organization of nanowires for functional nanosystems
-
Jul
-
D. Whang, S. Jin, and C. M. Lieber, "Large-scale hierarchical organization of nanowires for functional nanosystems," Jpn. J. Appl. Phys., vol. 43, no. 7B, pp. 4465-4470, Jul. 2004.
-
(2004)
Jpn. J. Appl. Phys
, vol.43
, Issue.7 B
, pp. 4465-4470
-
-
Whang, D.1
Jin, S.2
Lieber, C.M.3
-
39
-
-
33746907808
-
-
Y. Liu, J.-H. Chung, W. K. Liu, and R. S. Ruoff, Dielectrophoretic assembly of nanowires, J. Phys. Chem. B, 110, no. 29, pp. 14 098-14 106, Jul. 27, 2006.
-
Y. Liu, J.-H. Chung, W. K. Liu, and R. S. Ruoff, "Dielectrophoretic assembly of nanowires," J. Phys. Chem. B, vol. 110, no. 29, pp. 14 098-14 106, Jul. 27, 2006.
-
-
-
-
40
-
-
33646407304
-
Synchronous electrorotation of nanowires in fluid
-
Mar. 21
-
B. Edwards, T. S. Mayer, and R. B. Bluladvala, "Synchronous electrorotation of nanowires in fluid," Nano Lett., vol. 6, no. 4, pp. 626-632, Mar. 21, 2006.
-
(2006)
Nano Lett
, vol.6
, Issue.4
, pp. 626-632
-
-
Edwards, B.1
Mayer, T.S.2
Bluladvala, R.B.3
-
41
-
-
77953157398
-
Surfactant mediated assembly of gold nanowires on surfaces
-
Mar.-Dec
-
J. J. Booth, K. Crtichley, and S. D. Evans, "Surfactant mediated assembly of gold nanowires on surfaces," J. Exp. Nanosci., vol. 1, no. 2, pp. 125-142, Mar.-Dec. 2006.
-
(2006)
J. Exp. Nanosci
, vol.1
, Issue.2
, pp. 125-142
-
-
Booth, J.J.1
Crtichley, K.2
Evans, S.D.3
-
42
-
-
33745613849
-
Theory of nanocomposite network transistors for macroelectronics applications
-
Jun
-
M. A. Alain, N. Pimparkar, S. Kumar, and J. Murthy, "Theory of nanocomposite network transistors for macroelectronics applications," Mater. Res. Soc. Bull., vol. 31, no. 6, pp. 466-470, Jun. 2006.
-
(2006)
Mater. Res. Soc. Bull
, vol.31
, Issue.6
, pp. 466-470
-
-
Alain, M.A.1
Pimparkar, N.2
Kumar, S.3
Murthy, J.4
-
43
-
-
50549104030
-
Epitaxial growth of silicon nanowires using an aluminium catalyst
-
Dec
-
Y. Wang, V. Schmidt, S. Senz, and U. Gösele, "Epitaxial growth of silicon nanowires using an aluminium catalyst," Nat. Nanotechnol. vol. 1, no. 3, pp. 186-189, Dec. 2006.
-
(2006)
Nat. Nanotechnol
, vol.1
, Issue.3
, pp. 186-189
-
-
Wang, Y.1
Schmidt, V.2
Senz, S.3
Gösele, U.4
|