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Volumn 310, Issue 23, 2008, Pages 4741-4746

Micro-Raman for compositions characterization of selective area growth of AlxGayIn1-x- yAs materials by metal-organic vapor-phase epitaxy

(4) Ould Saad Hamady, S a Dupuis, N b Decobert J b Ougazzaden, A c

a SUPELEC (France)

b ALCATEL THALES III V LAB (France)

c GEORGIA INSTITUTE OF TECHNOLOGY (France)

Author keywords

A1. Characterization; A3. Metal organic vapor phase epitaxy; A3. Selective epitaxy; B2. Semiconducting III V materials

Indexed keywords

ALUMINA; ALUMINUM; ALUMINUM ARSENIDE; CHEMICAL ANALYSIS; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; INDIUM ARSENIDE; MAPPING; MAPS; PHONONS; RAMAN SCATTERING; SEMICONDUCTOR GROWTH; VAPORS;

A1. CHARACTERIZATION; A3. METAL-ORGANIC VAPOR-PHASE EPITAXY; A3. SELECTIVE EPITAXY; ALUMINUM CONTENTS; B2. SEMICONDUCTING III-V MATERIALS; COMPOSITION RANGES; GROWTH CONDITIONS; INDIUM COMPOSITIONS; LATERAL RESOLUTIONS; LO MODES; LOCAL COMPOSITIONS; LOCAL VARIATIONS; MICRON RANGES; MOVPE GROWTHS; ORGANIC VAPORS; PHONON MODES; PHONON PEAKS; RAMAN SCATTERING MEASUREMENTS; RAMAN SPECTROMETERS; RAMAN SPECTRUMS; SELECTIVE AREAS; SPATIAL VARIATIONS; STRAIN VARIATIONS;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 56549131463 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2008.06.080 Document Type: Article

Times cited : (3)

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