Characteristics of post-ionization using a femto-second laser

Applied Surface Science

Volumn 255, Issue 4, 2008, Pages 1595-1598

  Mibuka, R ^a   Hassaballa, S ^a   Uchino, K ^a   Yurimoto, H ^b   Todokoro, R ^c   Kumondai, K ^c   Ishihara, M ^c  

^a KYUSHU UNIVERSITY   (Japan)

^b HOKKAIDO UNIVERSITY   (Japan)

^c OSAKA UNIVERSITY   (Japan)

Author keywords

Femto second laser; Ga ion beam; Photo ionization; Post ionization; SNMS; TOF SIMS

Indexed keywords

ION BEAMS; LASER EXCITATION; SECONDARY ION MASS SPECTROMETRY;

FEMTO-SECOND LASER; GA ION BEAM; POST-IONIZATION; SNMS; TOF SIMS;

PHOTOIONIZATION;

EID: 56449118509     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.05.003     Document Type: Article

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