Towards quantitative depth profiling with high spatial and high depth resolution

Applied Surface Science

Volumn 255, Issue 4, 2008, Pages 1360-1363

  Vanhove, N ^a,b   Lievens, P ^b   Vandervorst, W ^a,c  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c KU LEUVEN   (Belgium)

Author keywords

EBIE; Kinetic energy distribution; Quantitative depth profiling; SF 6; Silicon; Zero energy SIMS

Indexed keywords

DEPTH PROFILING; DIAMOND FILMS; ELECTRON BEAMS; ELECTRONS; ETCHING; GASES; HIGH POWER LASERS; IONIZATION OF GASES; KINETIC ENERGY; KINETICS; SILICON; SULFUR HEXAFLUORIDE;

EBIE; ELECTRON IMPACT-IONIZATION; ELECTRON-INDUCED PROCESS; KINETIC ENERGY DISTRIBUTIONS; MAGNETIC SECTOR INSTRUMENT; QUANTITATIVE DEPTH PROFILING; SEMICONDUCTOR STRUCTURE; ZERO-ENERGY SIMS;

IMPACT IONIZATION;

EID: 56449117296     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.05.178     Document Type: Article

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