SIMS analysis of 83 Kr implanted UO 2

Applied Surface Science

Volumn 255, Issue 4, 2008, Pages 1323-1326

  Portier, S ^a   Bremier S ^a   Hasnaoui, R ^a   Bildstein, O ^a   Walker, C T ^a  

^a JOINT RESEARCH CENTRE   (Italy)

Author keywords

Depth profiling; Krypton; Quantification; SIMS; Uranium dioxide

Indexed keywords

ION BEAMS; KRYPTON; OXYGEN; SECONDARY ION MASS SPECTROMETRY; SINGLE CRYSTALS; URANIUM DIOXIDE;

IMPLANTATION PROFILES; INELASTIC COLLISION; MEASURED DEPTHS; OFFSET VOLTAGE; QUANTIFICATION; SAMPLE SURFACE; SIGNAL INTENSITIES; SIMS ANALYSIS;

DEPTH PROFILING;

EID: 56449097164     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.05.263     Document Type: Article

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