Oxygen ion beam-induced abnormal surface topographic development at Ta/Si interface

Applied Physics Letters

Volumn 69, Issue 17, 1996, Pages 2483-2485

  Kim, Kyunq Joong ^a,b   Jung, Kyung Hoon ^a   Moon, Dae Won ^b  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Korea Research Institute of Standards and Science   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 5644269325     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117505     Document Type: Article

References (11)

1. K. Wittmaack, J. Vac. Sci. Technol. A 8, 2246 (1990).
2. F. A. Stevie, P. M. Kahora, D. S. Simons, and P. Chi, J. Vac. Sci. Technol. A 6, 76 (1988).
3. K. J. Kim and D. W. Moon, Appl. Phys. Lett. 60, 1178 (1992).
4. P. Sigmund, J. Mater. Sci. 8, 1545 (1973).
5. G. Carter, M. J. Nobes, F. Paton, J. W. Williams, and J. L. Whitton, Radiat. Eff. 33, 65 (1977).
6. J. H. Evans, J. Nucl. Mater. 76&77, 228 (1978).
7. R. M. Bradley and J. M. E. Harper, J. Vac. Sci. Technol. A 6, 2390 (1988).
8. E. Chason, T. M. Mayer, B. K. Kellerman, D. T. Mellroy, and A. J. Howard, Phys. Rev. Lett. 72, 3040 (1994).
9. A. Karen, Y. Nakagawa, M. Hatada, K. Okuno, F. Soeda, and A. Ishitani, Surf. Interface Anal. 23, 506 (1995).
10. M. L. Yu and W. Reuter, J. Vac. Sci. Technol. 17, 36 (1980).
11. D. W. Moon and K. J. Kim, Appl. Phys. Lett. 62, 3094 (1993).