Stacking fault energy in 4He crystals

Journal of Low Temperature Physics

Volumn 153, Issue 5-6, 2008, Pages 244-249

  Junes, Heikki J ^a   Alles, H ^a   Manninen, M S ^a   Parshin, A Y ^b   Todoshchenko, I A ^a  

^a AALTO UNIVERSITY   (Finland)

^b KAPITZA INSTITUTE FOR PHYSICAL PROBLEMS   (Russian Federation)

Author keywords

Growth kinetics; Helium 4; Liquid solid interfaces; Planar defects; Quantum crystals; Stacking faults

Indexed keywords

ATOMIC LAYERS; CRYSTAL SURFACES; DIHEDRAL ANGLES; PLANAR DEFECTS; QUANTUM CRYSTALS; SAMPLE PREPARATIONS; SOLID INTERFACES; STACKING FAULT ENERGIES;

CRYSTAL DEFECTS; CRYSTALLOGRAPHY; CRYSTALS; GROWTH KINETICS; HELIUM; INERT GASES; LIQUIDS; MOSFET DEVICES; POWDERS; STACKING FAULTS; SURFACE CHEMISTRY; SURFACE TENSION;

PHASE INTERFACES;

EID: 56349171590     PISSN: 00222291     EISSN: 15737357     Source Type: Journal    
DOI: 10.1007/s10909-008-9828-0     Document Type: Conference Paper

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