Increased single-photon emission from InP/AlGaInP quantum dots grown on AlGaAs distributed Bragg reflectors

Journal of Crystal Growth

Volumn 310, Issue 23, 2008, Pages 4818-4820

  Rossbach R ^a   Schulz, W M ^a   Reischle, M ^a   Beirne, G J ^a   Jetter, M ^a   Michler, P ^a  

^a UNIVERSITY OF STUTTGART   (Germany)

Author keywords

A1. Characterization; A3. MOVPE; A3. Quantum dots; B2. Semiconducting indium phosphide

Indexed keywords

ALUMINA; BRAGG CELLS; BRAGG REFLECTORS; DISTRIBUTED BRAGG REFLECTORS; ELECTROMAGNETIC WAVES; INDIUM PHOSPHIDE; LIGHT EMISSION; LUMINESCENCE; OPTICAL WAVEGUIDES; PARTICLE BEAMS; PHOTONS; QUANTUM ELECTRONICS; REFLECTION; SEMICONDUCTING INDIUM; SEMICONDUCTING INDIUM PHOSPHIDE;

A1. CHARACTERIZATION; A3. MOVPE; A3. QUANTUM DOTS; ANTIBUNCHING; B2. SEMICONDUCTING INDIUM PHOSPHIDE; LUMINESCENCE INTENSITIES; PHOTON CORRELATIONS; PHOTON EMISSION EFFICIENCIES; PHOTON EMISSIONS; PHOTON EMITTERS; QUANTUM DOTS; QUANTUM DOTS EMITTING; REFERENCE SAMPLES; SPECTRAL RANGES; UNDER PULSED EXCITATIONS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 56249092053     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.07.039     Document Type: Article

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