Silicon-layer guided-mode resonance polarizer with 40-nm bandwidth

IEEE Photonics Technology Letters

Volumn 20, Issue 22, 2008, Pages 1857-1859

  Lee, K J ^a   LaComb, R ^a   Britton, B ^b   Shokooh Saremi, M ^a   Silva, H ^a   Donkor, E ^a   Ding, Y ^c   Magnusson, Robert ^a  

^a UNIVERSITY OF CONNECTICUT   (United States)

^b Samsung Austin Semiconductor   (United States)

^c Resonant Sensors Incorporated   (United States)

Author keywords

Guided mode resonance (GMR); Leaky waves; Polarizer; Thin film optics

Indexed keywords

LIGHT; OPTICAL INSTRUMENTS; POLARIZATION; RESONANCE; SILICON;

CENTRAL WAVELENGTHS; EXTINCTION RATIOS; FABRICATED DEVICES; GLASS SUBSTRATES; GUIDED-MODE RESONANCE (GMR); GUIDED-MODE RESONANCES; INCIDENT LIGHTS; LEAKY WAVES; MAGNETIC POLARIZATIONS; POLARIZER; SINGLE LAYERS; THIN-FILM OPTICS; WAVELENGTH RANGES;

AMORPHOUS SILICON;

EID: 56049111615     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2008.2004777     Document Type: Article

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